Исследование Фотоотклика Графена, Полученного Методом Химического Осаждения Из Газовой Фазы

Abstract

The paper presents the results of experiments in the fabrication and research of properties of photodetector structures on the basis of monolayer graphene produced by chemical vapor deposition. The base structure was the geometry of a Ta2O5 vertical microcavity with a lower dielectric SiO2/Ta2O5 distributed Bragg reflector with a resonance wavelength of about 850 nm. The conditions were optimized for the transfer and fabrication of mesas in the graphene layer on the microcavity surface. The diagnostics of the structural quality of graphene after the fabrication of mesas in the graphene layer and contact pads by Raman spectroscopy evidence the monolayer structure of graphene with a low singularity strength in its spectrum that is responsible for the structure imperfection. The photocurrent value at local optical pumping was measured.