Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Abstract

The recent discovery of the one‐atom‐thick, two‐dimensional graphene layers with exciting properties including superb optical transparency and high mechanical robustness has stimulated extensive research interest for use as an alternative nanowires (NWs) growth platform for applications in next generation, flexible, stretchable, and printable electronic and optoelectronic devices. When combined with the exceptional capabilities of semiconductor NWs including improved light absorption, reduced optical reflectance, enhanced carrier collection, and fast response, the performance of optoelectronic devices could be significantly improved in novel high‐performance, flexible nanodevices. However, the growth of semiconductor NWs on 2D graphene layers is highly challenging owing to the absence of surface dangling bonds on graphene. Intriguingly, the last decade has witnessed a flurry of research activity on the growth of III‐V semiconductor NWs on graphene. In this review, we highlight the significant advancements that have been made in circumventing this challenge to realize the growth of III‐V semiconductor NWs on graphene. We then summarize the recent progress made in the development of graphene‐based NWs devices including photodetectors and solar cells. Finally, a brief conclusion and outlook of the way forward in the growth of semiconductor NWs on graphene is presented.

Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene

“…The heterogeneous integration of two-dimensional (2D) materials, especially graphene and inorganic compounds, presents new opportunities for semiconductor devices, which can be used to prepare new flexible, wearable, and transferable electronic and optoelectronic devices. − Graphene has excellent physical and chemical properties, such as optical transparency, , high electron mobility, and thermal conductivity. , Preparation of GaN on graphene can take advantage of the weak coupling of van der Waals (vdWs) forces between layers of graphene to effectively release interfacial stresses and thus improve the quality of GaN epilayers. , Recently, Kim et al discovered a new epitaxy technique called “remote epitaxy” . The principle of this technique is to take advantage of the “lattice transparency” of graphene, and the electrostatic potential of the substrate can interact remotely with the epilayer through graphene.…”

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

“…The epitaxy of III-Vs on 2D material templates usually involves the modification of the vdW surface by etching techniques to promote nucleation sites. A review on recent developments in vdW epitaxy of III-V semiconductors on 2D materials reports the various surface treatments carried out to promote and control the growth [15]. These treatments, however, deteriorate the surface and affect its physical properties.…”

“…Much progress has been achieved in recent years in the growth of III-V NWs on graphene. A recent review article on vdW epitaxy of III-V NWs gives an account of various methods used to achieve NW and device structures [15]. However, more research and development is required to explore the most suitable 2D substrates and growth conditions for potential commercial-scale heteroepitaxy and device applications.…”

Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal–Organic Chemical Vapor Deposition

“…III–V compound semiconductors such as GaAs have excellent electronic and optoelectronic properties that have been applied to various device structures, including solar cells, , photodetectors, and lasers. − Currently, III–V-based devices are relatively expensive, with about a third of the cost attributed to the expensive single-crystal substrate used for epitaxy. With the rising demands for light-weight, wearable, transparent, and cost-effective electronic and optoelectronic devices, the choice of substrates for epitaxy is shifting rapidly from thick and rigid single-crystal substrates to unconventional substrates, such as two-dimensional atomic-layered materials (2D-ALMs). − Since the discovery of graphene, there has been a rapid increase in the exploration of many other 2D-ALMs, including MoS 2 and hexagonal boron nitride, for various applications, one of which is their use as substrates for the growth of III–V thin films and nanostructures. Van der Waals epitaxy, an unconventional epitaxial technique first demonstrated by Koma, is an emerging technique that allows the growth of virtually any material on a 2D substrate or a template.…”

“…The relative rotations of hexagonal nanowires have been attributed to the different adsorption sites on the graphene lattice. 18 Other reports on vapor−liquid−solid (VLS) and non-VLS III−V nanowire growth on graphene and other 2D templates have yielded defective structures, summarized in a review paper, 8 except for Ag-catalyzed InAs nanowires grown on graphite flakes 19 which are reported to have a near-perfect wurtzite (WZ) crystal structure with very few stacking faults near the top and base of the nanowires. However, there is little information on nanowire polarity grown on 2D templates.…”