Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates

Paetzelt, Hendrik; Gottschalch, V.; Bauer, Jens; Benndorf, G.; Wagner, G.

doi:10.1016/j.jcrysgro.2008.06.065

Cited by 41 publications

(39 citation statements)

References 11 publications

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“…These pillars have deformed crystal facets due to In nucleation on the side-walls. This tendency for In to bond to all available crystal surfaces has also been reported in Ref [10].…”

Section: Introductionsupporting

confidence: 84%

Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar

et al. 2011

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Density-functional calculations of the potential energy surface for tracer Ga and In adatoms above two GaAs (111)A and two GaAs (110) surface reconstructions are presented in order to understand the growth conditions required to form axial GaAs/InGaAs heterostructures in nanopillars. The surface reconstructions present under As-rich conditions have lower diffusion barriers for In adatoms. In addition, the binding energy of In becomes more competitive with Ga under As-rich conditions. We conclude that the As-rich reconstructions for GaAs(110) and GaAs(111)A are preferable for selective formation of hetero-interfaces on (111) facets. This work helps explain the recent successful formation of axial GaAs/InGaAs hetero-interfaces in catalyst free nanopillars.

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“…These pillars have deformed crystal facets due to In nucleation on the side-walls. This tendency for In to bond to all available crystal surfaces has also been reported in Ref [10].…”

Section: Introductionsupporting

confidence: 84%

Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar

et al. 2011

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“…It cannot be ruled out that the decomposition of the metalorganic sources is incomplete leading to an unintentional carbon (donor) incorporation and conductive InAs nanowires are observed by these groups. Tomioka et al 26,27 and Peatzelt et al 28 have employed SA-MOVPE to obtain InAs nanowires using H 2 as the ambient. Here, growth temperatures of 540-600 C are used, which is higher than for VLS grown wires.…”

Section: Introductionmentioning

confidence: 99%

Effect of Si-doping on InAs nanowire transport and morphology

Wirths¹,

Weis²,

Winden³

et al. 2011

Journal of Applied Physics

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The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N 2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

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“…[3] Using opening diameters in the range of a few hundred nanometers and inter-rod distances in the range of several microns, uniformly sized NRs were grown. [4] One key problem for the understanding of NR growth in such arrays is the mutual interaction of growing NRs with the SiN x mask, which can result in alloy formation or recrystallization of the initially amorphous SiN x .…”

Section: Semiconductor Nanorods (Nrs) Grown Bymentioning

confidence: 99%

“…The growth temperature was set to 750°C, providing equally hexagonally shaped NRs with uniform spacing. [4] Two samples have been investigated with different inter-rod spacing, D: sample 1 with D = 1.25 lm and sample 2 with D = 3 lm. Prior to X-ray measurements, the NR arrays were inspected by scanning electron microscopy (SEM).…”

Section: Semiconductor Nanorods (Nrs) Grown Bymentioning

confidence: 99%

X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B

Davydok

Biermanns

Pietsch

et al. 2009

Metall Mater Trans A

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We present a high-resolution X-ray diffraction pattern of periodic GaAs nanorod (NR) ensembles and individual GaAs NRs grown catalyst-free throughout a prepatterned amorphous SiN x mask onto GaAs[111]B surfaces. The experiments were performed at a home laboratory using synchrotron radiation in combination with a micron-sized beam prepared by compound refractive lenses. The structural properties were probed by measuring RSMs (q x , q z ) in the vicinity of GaAs (111) and (222) reflections. Besides the GaAs substrate peak, we found a second peak referring to NRs with lattice mismatch of 0.23 pct with respect to the substrate, probably caused by structural defects. The lateral periodicity of NRs was probed by q x scans, and the NR height obtained from the width of the diffraction curve along q z . Grazing-incidence in-plane diffraction revealed the appearance of small crystallites of cubic c-Si 3 N 4 caused by recrystallization of SiN x during NR growth. Whereas measurements at the home diffractometer provided average structure parameters, the micron-sized X-ray beam experiment was used to probe the parameters at individual NRs.

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Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates

Cited by 41 publications

References 11 publications

Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar

Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar

Effect of Si-doping on InAs nanowire transport and morphology

X-Ray Diffraction from Periodically Patterned GaAs Nanorods Grown onto GaAs[111]B

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