Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

Yang, Jun; Lunev, A.; Simin, Grigory; Chitnis, A.; Shatalov, M.; Khan, M. Asif; Nostrand, J. E. Van; Gaška, R.

doi:10.1063/1.125745

Cited by 123 publications

(63 citation statements)

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“…Epitaxial growth of GaN and ZnO layers on silicon substrates has been demonstrated by a few research groups. [2][3][4] However, a large lattice mismatch of more than 17% between the hexagonal GaN and ZnO and the cubic Si is still an issue in the device fabrication. A large lattice mismatch between these films and the silicon substrate results in the formation of high dislocation densities and ultimately reduces the emission lifetime and reliability of the device.…”

Section: Introductionmentioning

confidence: 99%

Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

Natarajan

Daniels

Cameron

et al. 2006

Journal of Applied Physics

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Copper ͑I͒ chloride ͑CuCl͒ is a potential candidate for ultraviolet ͑UV͒ optoelectronics due to its close lattice match with Si ͑mismatch less than 0.4%͒ and a high UV excitonic emission at room temperature. CuCl thin films were deposited using radio frequency magnetron sputtering technique. The influence of target to substrate distance ͑d ts ͒ and sputtering pressure on the composition, microstructure, and UV emission properties of the films were analyzed. The films deposited with shorter target to substrate spacing ͑d ts =3 cm͒ were found to be nonstoichiometric, and the film stoichiometry improves when the substrate is moved away from the target ͑d ts = 4.5 and 6 cm͒. A further increase in the spacing results in poor crystalline quality. The grain interface area increases when the sputtering pressure is increased from 1.1ϫ 10 −3 to 1 ϫ 10 −2 mbar at d ts = 6 cm. Room temperature cathodoluminescence spectrum shows an intense and sharp UV exciton ͑Z 3 ͒ emission at ϳ385 nm with a full width at half maximum of 16 nm for the films deposited at the optimum d ts of 6 cm and a pressure of 1.1ϫ 10 −3 mbar. A broad deep level emission in the green region ͑ ϳ515 nm͒ is also observed. The relative intensity of the UV to green emission peaks decreased when the sputtering pressure was increased, consistent with an increase in grain boundary area. The variation in the stoichiometry and the crystallinity are attributed to the change in the intensity and energy of the flux of materials from the target due to the interaction with the background gas molecules.

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Section: Introductionmentioning

confidence: 99%

Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

Natarajan

Daniels

Cameron

et al. 2006

Journal of Applied Physics

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“…Silicon is increasingly being used as a substrate for GaN growth [2,3] GaN deposited on silicon (Si) substrates has great advantages including excellent wafer quality, less hardness and more design flexibility with current silicon electronic circuit system [4][5][6]. The Si substrate for GaN growth has some advantages over other substrates.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Chaudhari¹,

Chinchamalatpure²,

Ghosh³

2011

AJAC

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The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. Xray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600˚C. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fabricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN without presence of elemental gallium and Ga 2 O 3 in this film.

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“…This is explained through the breaking and creation of resonance between the finite states inside the quantum wells and the conduction band in the emitter side as a bias is applied . Beyond intersubband transitions and infrared emission and absorption, MQW heterostructure devices have also been designed for blue light emitting diodes (Yang et al, 2000).…”

Section: Introductionmentioning

confidence: 99%