We report on the achievement of planar memristive devices on monocrystalline ZnO substrates using Ti/Al and Pt/Au contacts with dimensions of 100 x 100 microm(2) and spacings of approximately 60 microm. Effects of both thermal and electro-forming processes on the switching characteristics are investigated. It is observed that the thermally formed devices exhibit an extremely large R(OFF)/R(ON) value of approximately 20 000. The electrically formed devices, on the other hand, demonstrate an exceptional switching stability, with R(OFF)/R(ON) variations of < 2% for durations of over 10(5) s and more than 1800 switching cycles. The dependence of the switching characteristics on the formation processes, as well as the metal electrodes, could be explained by an oxygen vacancy formation/annihilation and migration model.

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Articles you may be interested inZnO-based one diode-one resistor device structure for crossbar memory applications Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistorWe have performed a detailed investigation of the fabrication and switching characteristics of ZnO-based memristive devices. The effects of doping and various metal contacts have been studied. It is observed that, with the use of Al metal contacts and ZnO:Al layers, relatively high R OFF /R ON ratios of 200 can be achieved. Much improved device stability and reproducibility, on the other hand, can be realized by using either nominally undoped or Mg-doped ZnO memristive layers. The experimental results may be well explained by an oxygen vacancy formation and migration model. The present work represents an important step in realizing high performance ZnO-based memristive devices for future nonvolatile memory applications.

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