Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures

“…We have previously shown 1 that an epitaxial shadow mask is adequate for producing small, nonplanar features, including microlenses and microlens arrays that have focal lengths down to 30 µm and spot sizes at the diffraction limit. Epitaxial shadow masks have also been used for lateral bandgap engineering, 8 and to integrate a beam expander with a Fabry-Perot 9 and a distributed feedback 2 laser to enhance coupling to an optical fiber. The epitaxial shadow mask allows precise placement, and mask adhesion during growth is excellent.…”

Non-planar and masked-area epitaxy by organometallic chemical vapour deposition

“…Recently, shadow masks consisting of patterned and etched epitaxial layers have been increasingly used for lateral dimensional control [18,74,75]. Since the growth is non-selective, it is a particularly useful technique when good selectivity is hard to obtain, thereby eliminating the loss of control of the thickness and composition due to variable selectivity [7q.…”

“…The unwanted deposit on the mask is removed by using a photoresist mask and selective etching. This technique has been used to fabricate InGaAspnP laser arrays, with a wavelength span of 130 nm centred around 1.55 pm [74]. In addition it has been used to fabricate an array of lenses to focus the light from a light emitting diode array [75].…”