Non-planar and masked-area epitaxy by organometallic chemical vapour deposition

Abstract

In this paper we review some of the recent work on growth on nonplanar and masked GaAs and InP substrates and show how it can simplify device fabrication, enable novel or more functional devices to be made, and how it can be applied to the formation of low-dimensional structures.

Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques

“…The growth-rate enhancement, material composition and photoluminescence (PL) wavelength shift as a function of the oxide mask orientation, size, and separation have been studied extensively [1][2][3][4]. Due to the difference of vapor phase diffusion length and surface migration length of group III species, the material in the SAG region becomes indium rich and its PL shifts to longer wavelengths compared with that in the non-masked regions [5][6][7][8][9].…”

Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

“…Lateral growth of III-V semiconductors is utilized to obtain integrated optical components through selective area epitaxy (SAE) [1,2] and to achieve dislocation density reduction when substrates are mismatched to the epitaxial overlayer through lateral epitaxial overgrowth (LEO) [3][4][5][6]. The kinetics of adatom attachment dominate lateral growth [7,8]; however, the relative surface energies of the different facets determine the equilibrium shape of the crystal [9].…”