Segregation mechanism of arsenic dopants at grain boundaries in silicon

Ohno, Yutaka; Yokoi, Takeshi; Shimizu, Yasuo; Ren, Jie; Inoue, Koji; Nagai, Y.; Kutsukake, Kentaro; Fujiwara, Kozo; Nakamura, Atsutomo; Matsunaga, Katsuyuki; Yoshida, Hideto

doi:10.1080/27660400.2021.1969701

Cited by 3 publications

(2 citation statements)

References 87 publications

(112 reference statements)

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“…These results would support the transient enhancement diffusion model that the diffusion lengths of those impurities are dominated by the diffusivity of the point defects assisting the impurity diffusion. 29) On the other hand, the oxygen density peaks of the bonding interface in the Si side by 3-4 nm [the yellow curve in Fig. 1(f)].…”

Section: Resultsmentioning

confidence: 99%

“…26,27) The foil was thinned to about 100 nm thick by LT-FIB milling with a cold stage operated at −150 °C (IZUMI-TECH, IZU-TSCS004) to suppress the structural modification in the FIB processes. 24,[27][28][29] The chemical composition around the interface was examined by energy-dispersive X-ray spectroscopy (EDX) under STEM, using a JEOL JEM-ARM200F analytical microscope. The impurity detection limit was about 0.1 at%.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding

Ohno

Liang

Yoshida

et al. 2022

Jpn. J. Appl. Phys.

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Chemical composition around diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature is examined by energy dispersive X-ray spectroscopy under scanning transmission electron microscopy. Iron impurities segregate just on the bonding interfaces, while oxygen impurities segregate off the bonding interfaces in the silicon side by 3-4 nm. Oxygen atoms would segregate so as to avoid the amorphous compound with silicon and carbon atoms, self-organized at the bonding interfaces in the surface activated bonding process. When the bonding interfaces are annealed at 1000 oC, the amorphous compound converts into cubic silicon carbide (c-SiC), and nano-voids 5-15 nm in size are formed at the region between silicon and c-SiC, at which the oxygen density is high before annealing. The nano-voids can act as the gettering sites in which metal impurities are preferentially agglomerated, and the impurity gettering would help to improve the electronic properties of the bonding interfaces by annealing.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding

Ohno

Liang

Yoshida

et al. 2022

Jpn. J. Appl. Phys.

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Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study

Cuduvally

Morris

Oosterbos

et al. 2022

Journal of Applied Physics

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A major challenge for atom probe tomography (APT) quantification is the inability to decouple ions that possess the same mass–charge (m/n) ratio but a different mass. For example, 75As+ and 75As22+ at ∼75 Da or 14N+ and 28Si2+ at ∼14 Da cannot be differentiated without the additional knowledge of their kinetic energy or a significant improvement of the mass resolving power. Such mass peak overlaps lead to ambiguities in peak assignment, resulting in compositional uncertainty and an incorrect labeling of the atoms in a reconstructed volume. In the absence of a practical technology for measuring the kinetic energy of the field-evaporated ions, we propose and then explore the applicability of a post-experimental analytical approach to resolve this problem based on the fundamental process that governs the production of multiply charged molecular ions/clusters in APT, i.e., post-field ionization (PFI). The ability to predict the PFI behavior of molecular ions as a function of operating conditions could offer the first step toward resolving peak overlap and minimizing compositional uncertainty. We explore this possibility by comparing the field dependence of the charge-state-ratio for Si clusters (Si2, Si3, and Si4) with theoretical predictions using the widely accepted Kingham PFI theory. We then discuss the model parameters that may affect the quality of the fit and the possible ways in which the PFI of molecular ions in APT can be better understood. Finally, we test the transferability of the proposed approach to different material systems and outline ways forward for achieving more reliable results.

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Dynamics at crystal/melt interface during solidification of multicrystalline silicon

Fujiwara

Chuang

Maeda

2022

High Temperature Materials and Processes

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A fundamental understanding of crystal growth dynamics during directional solidification of multicrystalline Si (mc-Si) is crucial for the development of crystal growth technology for mc-Si ingots for use in solar cells. In situ observation of the crystal/melt interface is a way to obtain direct evidence of phenomena that occur at a moving crystal/melt interface during growth. In this review, some of the phenomena occurring in the solidification processes of mc-Si are introduced based on our in situ observation experiments, after a brief introduction of the history of the development of crystal growth technologies to obtain mc-Si ingots for solar cells.

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Segregation mechanism of arsenic dopants at grain boundaries in silicon

Abstract: on the characteristics of valence electrons of As atoms as well as on local bond distortions at GBs, via anisotropic bond distortions and dimerization.

Cited by 3 publications

References 87 publications

Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding

Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding

Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study

Dynamics at crystal/melt interface during solidification of multicrystalline silicon

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