Dynamics at crystal/melt interface during solidification of multicrystalline silicon

Fujiwara, Kozo; Chuang, Lu-Chung; Maeda, Kensaku

doi:10.1515/htmp-2022-0020

Cited by 7 publications

(1 citation statement)

References 128 publications

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“…Meanwhile, the melting processes could form different self-organized shaped structures of Si crystals. 4,5) For example, spherical crystals 6,7) and a variety of dendrites 8,9) grow from melted Si. Hemispherical Si islands grow through solid-film dewetting, 10,11) and cone-like Si structures are fabricated by local heating with focused laser irradiation.…”

Section: Introductionmentioning

confidence: 99%

In situ observation of formation of Si protrusions by local melting of a Si narrow current path using resistive heating together with electron beam irradiation

Nishimura¹,

Tomitori²

2022

Jpn. J. Appl. Phys.

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Silicon (Si) protrusions were grown by local surface melting and resolidified on a Si(111) fragment with a narrow current path that was fabricated using a microgrinder at the center of the fragment. The narrow path was resistively heated by passing a current through it until it burned. The surface of the narrow path and fragment gradually melted with increasing current, and the melted Si started to flow from the narrow path to its sides owing to the surface tension of the melted Si. When the fragment surface near the path was locally irradiated with an electron-beam, melted Si accumulated in the irradiation region, resulting in Si protrusions of ~600 µm in height. The formation mechanism of the Si protrusion was discussed based on in-situ optical microscope observations up to the burn-out of the Si narrow path.

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Section: Introductionmentioning

confidence: 99%

In situ observation of formation of Si protrusions by local melting of a Si narrow current path using resistive heating together with electron beam irradiation

Nishimura¹,

Tomitori²

2022

Jpn. J. Appl. Phys.

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Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Guan

et al. 2022

Silicon

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The temperature eld distribution during the growth of crystalline silicon by the directional solidi cation (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally veri ed. Based on the model, the in uence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature eld, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively.The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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Schmidt number's impact during the growth of mc-silicon ingot through directional solidification furnace for photovoltaic applications: A computational investigation

Keerthivasan,

Srinivasan,

Madhesh

et al. 2023

Chemical Physics Impact

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Dynamics at crystal/melt interface during solidification of multicrystalline silicon

Cited by 7 publications

References 128 publications

In situ observation of formation of Si protrusions by local melting of a Si narrow current path using resistive heating together with electron beam irradiation

In situ observation of formation of Si protrusions by local melting of a Si narrow current path using resistive heating together with electron beam irradiation

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Schmidt number's impact during the growth of mc-silicon ingot through directional solidification furnace for photovoltaic applications: A computational investigation

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