Secure Satellite Communication Digital IF CMOS $Q$ -Band Transmitter and $K$ -Band Receiver

LaRocca, Tim; Thai, Kerri; Snyder, Rob; Jai, R.; Kultran, Daniel; Fordham, O.; Wu, Bryan Yi-Cheng; Yang, Yeat; Watanabe, Monte; Rodgers, Paul; Lam, D.; Nakamura, Eric; Daftari, Naveen; Kamgar, Farbod

doi:10.1109/jssc.2019.2896977

Cited by 9 publications

(2 citation statements)

References 9 publications

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“…The weakly coupled transformer feedback provides possible solution of mitigating the reverse signal path without degrading NF [48], [49]. The criterion of the amplifier unilateralization is h 12(Core) = −h 12(XFMR) (5) where h (Core) and h (XFMR) represent the hybrid h-parameters of LNA first-stage core network and the transformer network, as shown in Fig. 6.…”

Section: A Receivermentioning

confidence: 99%

A Ka-Band SATCOM Transceiver in 65-nm CMOS With High-Linearity TX and Dual-Channel Wide-Dynamic-Range RX for Terrestrial Terminal

Wang

You

et al. 2022

IEEE J. Solid-State Circuits

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In this article, a K a-band satellite communication (SATCOM) transceiver is first presented using a standard CMOS technology. The proposed K a-band SATCOM transceiver consists of a high-linearity transmitter (TX) and dual-channel receiver (RX); both TX and RX are based on direct-conversion architecture. By implementing the dual-channel RX, multiple multiplexing modes, including polarization multiplexing and frequency multiplexing, can be enabled depending on the application. The RX variable gain is distributed in both RF blocks and baseband blocks to achieve a wide input dynamic range. The LNA employs a dual-coupling transformer for a low-noise figure (NF) and wideband input matching; moreover, it enhances the amplifier unilateralization characteristic to mitigate the loading effect from switched attenuators. An adjacent channel interference (ACI) cancellation scheme is proposed to further enhance the RX linearity in the frequency multiplexing mode. In the TX, single-turn high-quality-factor transformer is employed to realize matching network and four-way power combining. A prototype of the SATCOM transceiver is fabricated in a standard 65-nm CMOS process. Under 1.05-V supply voltage, the TX achieves a P SAT of 20.5 dBm and an average output power of 12 dBm with 2% error vector magnitude (EVM) and a 37.6-dB ACPR. The dual-channel RX achieves an NF of 5.4 dB, an IIP3 of −30 dBm on the high-gain mode, the ACI cancellation is measured of 7.9 dB with a 100-MHz signal bandwidth.

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Section: A Receivermentioning

confidence: 99%

A Ka-Band SATCOM Transceiver in 65-nm CMOS With High-Linearity TX and Dual-Channel Wide-Dynamic-Range RX for Terrestrial Terminal

Wang

You

et al. 2022

IEEE J. Solid-State Circuits

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“…As the near-end of millimeter waves, the Q-band has the characteristics of wide bandwidth, strong anti-interference ability, and intense penetration. It has excellent application prospects in high-speed wireless communications, satellite remote sensing, radar detection, and other fields [1,2,3,4]. In order to promote the global or regional harmonization of 5G millimeter wave frequency bands, the International Telecommunications Union (ITU) set a topic at the 2019 World Radiocommunication Conference (WRC-19) to conduct research and consultation on frequency bands in the 24.25-86GHz frequency band.…”

Section: Introductionmentioning

confidence: 99%

Compact flat folding SIW bandpass filter utilizing GaAs-based IPD process

Wu,

Wang,

et al. 2024

IEICE Electron. Express

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This letter presents a fully monolithic microwave-integrated circuit (MMIC) substrate integrated waveguide (SIW) filter using integrated passive device (IPD) technology for Q-band applications. It is challenging to implement an SIW bandpass filter (BPF) at the chip level due to the complex process rules of chip processing. A possible solution is to use multiple TE101 mode SIW resonators to build a BPF via magnetic coupling. However, this layout method can easily cause a larger chip aspect ratio, which is not conducive to the chip's reliability. To this end, the proposed SIW filter adopts four SIW resonators to form a highly selective BPF through planar stacking. Measurement results show that the minimum insertion loss of the proposed SIW filter is 3.07 dB, and fractional BW (FBW) of 4.4 % with a compact size of 0.199𝜆 2 0 , including pad, which is among the best compared to previously reported SIW chip BPFs.

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A 20-GHz Ultra-Low-Power LNA Using gm-Boosted and Current-Reuse Techniques in 65-nm CMOS for Satellite Communication Terminals

Zhang

Zhao

2019

2019 IEEE Asian Solid-State Circuits Conference (A-Sscc)

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Secure Satellite Communication Digital IF CMOS $Q$ -Band Transmitter and $K$ -Band Receiver

Cited by 9 publications

References 9 publications

A Ka-Band SATCOM Transceiver in 65-nm CMOS With High-Linearity TX and Dual-Channel Wide-Dynamic-Range RX for Terrestrial Terminal

A Ka-Band SATCOM Transceiver in 65-nm CMOS With High-Linearity TX and Dual-Channel Wide-Dynamic-Range RX for Terrestrial Terminal

Compact flat folding SIW bandpass filter utilizing GaAs-based IPD process

A 20-GHz Ultra-Low-Power LNA Using gm-Boosted and Current-Reuse Techniques in 65-nm CMOS for Satellite Communication Terminals

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