Second generation fluids for 193nm immersion lithography

French, Roger H.; Qiu, Weiming; Yang, Min; Wheland, Robert C.; Lemon, M. F.; Shoe, Aaron L.; Adelman, Doug J.; Crawford, M. K.; Tran, Hoang V.; Feldman, Jerald; McLain, Stephan J.; Peng, Sheng

doi:10.1117/12.656626

Cited by 20 publications

(9 citation statements)

References 5 publications

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“…On the other hand, the absorbance of a G2 fluid is easily increased by dissolved oxygen or laser irradiation. Moreover, the dn/dT of a G2 fluid is 5~6 times larger than that of water (French et al, 2006, Santillan et al, 2006, Furukawa et al, 2007. This means that a temperature change causes a larger change in the refractive index and results in larger thermal aberration (Sekine et al, 2007).…”

Section: Fluid Degradationmentioning

confidence: 96%

High-Index Immersion Lithography

Sakai¹

2011

Recent Advances in Nanofabrication Techniques and Applications

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Section: Fluid Degradationmentioning

confidence: 96%

High-Index Immersion Lithography

Sakai¹

2011

Recent Advances in Nanofabrication Techniques and Applications

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“…Moving forward, a higher refractive index fluid is expected to provide a potential extension of ArF immersion lithography to hp38nm or below. To date, a number of ArF immersion high-refractive-index fluids (HIFs), referenced as 2 nd Generation Fluid, have been reported [2][3][4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

“…ArF immersion lithography with water as the fluid lens has been accepted as the most promising candidate for the 45-nm node (hp65-nm) [1][2][3][4][5][6] . Moving forward, a higher refractive index fluid is expected to provide a potential extension of ArF immersion lithography to hp38nm or below.…”

Section: Introductionmentioning

confidence: 99%

High-refractive index material design for ArF immersion lithography

Furukawa

Kishida²,

Miyamatsu³

et al. 2007

SPIE Proceedings

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High-refractive-index fluids (HIFs) are being considered to replace water as the immersion fluid in next generation 193nm immersion scanner. At SPIE 2006, we have demonstrated the attractive optical properties and good imaging performance for our HIF candidates, HIL-001 and HIL-002. In this paper, we will describe our latest results on the remaining issues for the practical application of HIF candidates, as well as introduce 3 rd generation fluids for the further extension of ArF immersion lithography. In order to improve the fluid transparency, we have tried two approaches. One is the improvement of transparency for HIL-001 based on a refining technology and the other is to develop a novel HIF candidate by using computational chemistry, which is named HIL-203. By passing through a suitable refining unit, HIL-001 can reach a transmittance of >99%/mm, which is as high as water. This new purification method can be applied to an on-site reuse system. It was also found that the refining unit was very effective to eliminate the impurities coming from the photo-degradation of HIL, chemical substances contamination under the air exposure, and leaching of resist components such as photo-acid generator or quencher. We have developed a new fluid for 3 rd generation immersion fluids. It had a higher refractive index than that of HIL-001 or HIL-203; however, it still falls short of our target value. Additionally, by using a novel design concept, we have developed a top-coat with high refractive index for HIL immersion lithography, which gave an appropriate contact angle for scanning exposure.

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“…5 In a double-patterning approach with high-index methods, half pitches approaching 16 nm were anticipated with the most aggressive k1 reductions. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] High-index immersion was considered as an alternative next technology until the fall of 2008, when the development of the required materials and technology was stopped by the main scanner vendors, and the focus shifted toward double patterning for 32-nm node and EUV lithography for the 22-nm node. Whereas EUV has shown the required high resolution on full wafer, its readiness to produce at acceptable cost of ownership still has to be demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Fluid-photoresist interactions and imaging in high-index immersion lithography

Tran

Hendrickx

Roey

et al. 2009

J. Micro/Nanolith. MEMS MOEMS

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Optical immersion lithography using fluids with refractive indices greater than that of water ͑1.436͒ can enable numerical apertures of 1.55 or above for printing sub-45-nm lines. Two second-generation immersion fluid candidates, IF132 and IF169, both have indices above 1.64 and have been optimized to absorb less than 0.1 cm −1 at 193.4 nm. These fluids, although meeting the requirements of index and absorption, must also be compatible with current resists and processes to image the required fine line patterns. Results of fluid-resist interactions, with water and high-index fluids on four commercial resists, are shown. Photoacid generator ͑PAG͒ leaching measurements reveal much less leaching into both high-index fluids than into water, and in two waterimmersion dedicated resists, no leaching is detected with the high-index immersion fluids. Little resist thickness change and swelling is detected by a quartz crystal microbalance ͑QCM͒ on contact with the fluids. Resist profile and line height changes due to pre-and postexposure fluid contact varies from one resist to the next, but overall the changes are minimal. Misting defects from high-index fluid-resist contact show lower counts than for water, and imaging on an immersion interference printer produces 36-nm half-pitch lines. We find no serious impediments to the use of high-index liquids based on these results.

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Second generation fluids for 193nm immersion lithography

Cited by 20 publications

References 5 publications

High-Index Immersion Lithography

High-Index Immersion Lithography

High-refractive index material design for ArF immersion lithography

Fluid-photoresist interactions and imaging in high-index immersion lithography

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