Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon

Chandra, Aditi; Takashima, Mao; Montague, Martha F.; Li, Joey H.; Kamath, Arvind

doi:10.1557/adv.2016.118

Cited by 4 publications

(4 citation statements)

References 4 publications

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“…The resulting mixture of oligohydrosilanes is called “liquid silicon” or “silicon ink” [5] . From these, thin films can be prepared by a variety of deposition techniques, e. g. spin coating, [4,6,7] slot die coating, [7] inkjet or other printing processes [1,8] and spraying methods [9] . The film deposition follows a thermal conversion to a very pure amorphous silicon (a:Si) layer at comparatively low temperatures between 300 and 500 °C [10] .…”

Section: Introductionmentioning

confidence: 99%

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Gerwig,

Böhme,

Friebel

2024

Chemistry A European J

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Liquid hydrosilanes are required for the production of silicon films. The silicon layers can be processed for electronic devices like transistors or thin‐film solar cells. Hydrosilanes are highly reactive and pyrophoric. Therefore, the synthesis of these compounds is challenging and dangerous. The available synthesis methods for hydrosilanes are reviewed and compared.Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin‐film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better‐quality films after processing.The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine‐ or chloride‐induced disproportionations, and transformation of monosilane to higher silanes.Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine‐ and chloride‐induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.

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Section: Introductionmentioning

confidence: 99%

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Gerwig,

Böhme,

Friebel

2024

Chemistry A European J

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“…Therefore, to move the printing process forward, instead of layering via ink-jet, a poly-CPS ink was slot-die coated to form a plasma enhanced chemical vapor deposition (PECVD) equivalent silicon layer. Second, the dopant ink was screen printed and third, a 300 mm square 100 μm thick stainless steel foil substrate, [17][18][19] which is high temperature compatible, was used to construct a hybrid of the conventional and new printing process. This combination was used to fabricate high mobility polysilicon CMOS TFTs for logic circuits on a flexible substrate with further low-cost potential due to roll-to-roll production.…”

Section: Introductionmentioning

confidence: 99%

Slot-die coating of silicon ink for volume production of CMOS polysilicon TFTs

Ito¹,

Kamath²

2021

Jpn. J. Appl. Phys.

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A large-area polysilicon film was formed from slot-die coating of cyclopentasilane based silicon ink and laser crystallization. In this article a study of silicon ink preparation and selection, slot-die coater setup, coating and laser crystallization is described. The polysilicon film was applied to fabricate complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) which were used to develop and demonstrate near field communication devices. This was part of a hybrid process flow consisting of conventional lithography and printing to fabricate CMOS TFTs. Slot-die coating of silicon ink on a 300 mm square 100 μm thick stainless steel substrate is a key building block of this hybrid process flow to subtract and replace high capital cost plasma enhanced chemical vapor deposition (PECVD), ion implantation and silicon wafers. With slot-die coating of silicon ink, a silicon layer formation equivalent to PECVD in quality was achieved.

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“…The formulation of prepolymerized dihydrosilanes benefits from an addition of pure CPS. [ 2 ] Deposition of silane inks has been demonstrated by spin coating [ 5,7,9 ] spray coating [ 20 ] slot‐die coating, [ 9 ] and ink‐jet printing [ 2,21 ] (step II). Layers as thick as 300 nm were realized by doctor blading of pure CPS.…”

Section: Introductionmentioning

confidence: 99%

From Cyclopentasilane to Thin‐Film Transistors

Gerwig

Ali

Neubert

et al. 2020

Adv Elect Materials

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Cyclopentasilane (CPS) has been studied as an liquid precursor for the deposition of thin silicon films for printed electronics and related applications. The processing involves a UV‐induced prepolymerization of CPS followed by liquid deposition and low‐temperature thermolysis. An insight into the oligomer and polymer formation including crosslinking in solution using 29Si NMR spectroscopy and electron spin resonance spectroscopy is reported. Formation of SiH (T‐units) and SiH3 (M‐units) is observed as well as short‐lived paramagnetic species. Additionally, the polymerization is followed by Raman spectroscopy. Reactive molecular dynamics simulations are applied to develop a theoretical model for the CPS‐ring‐opening and crosslinking steps. The experimental and computational data correspond well to each other and allow insight into the mechanism of polymer formation. The processing steps include spin‐coating, thermal drying, and conversion to amorphous silicon, H‐passivation, and fabrication of a CPS‐derived thin‐film transistor (TFT), without intermediate silicon crystallization. Further improvement is gained by using tetralene as a solvent, leading to a reduction of the time‐consuming polymerization step by one order of magnitude compared to cyclooctane. The overall quality and characteristics of the CPS‐derived spin‐coated silicon thin films correspond to standard plasma enhanced chemical vapor deposition‐derived devices with respect to performance levels.

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Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon

Cited by 4 publications

References 4 publications

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Slot-die coating of silicon ink for volume production of CMOS polysilicon TFTs

From Cyclopentasilane to Thin‐Film Transistors

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