2015
DOI: 10.1016/j.ijleo.2015.05.054
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Schottky junction UV photodetector based on CdS and visible photodetector based on CdS:Cu quantum dots

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Cited by 11 publications
(2 citation statements)
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“…Inserting the single Cd vacancy, S vacancy or Cd interstitial introduces a red shift to the peak n 2 (4.70, 4.44 and 4.61 eV). Cu-doped CdS-based materials have been applied to optoelectronic detectors widely [35]. Hence, this calculation finds a new approach for Cu-doped CdS optoelectronic detectors to regulate detection ranges.…”
Section: -P3mentioning
confidence: 99%
“…Inserting the single Cd vacancy, S vacancy or Cd interstitial introduces a red shift to the peak n 2 (4.70, 4.44 and 4.61 eV). Cu-doped CdS-based materials have been applied to optoelectronic detectors widely [35]. Hence, this calculation finds a new approach for Cu-doped CdS optoelectronic detectors to regulate detection ranges.…”
Section: -P3mentioning
confidence: 99%
“…For example, Viswanatha et al 26 showed that Cu-related emission tunability in an "inverted" core/shell structure ZnSe/CdSe can be achieved ranging from ∼1.3 to ∼2.7 eV by simply changing the dimension of both the core and/or shell as depicted in Figure 1. These very properties make Cu-doped NCs potential candidates for applications like photodetectors, 27,28 lightemitting diodes (LEDs), 18,23 photovoltaics, 29 and recently in luminescent solar concentrators. 30,31 However, Cu is known to exist in +1 and +2 oxidation states and a fundamental understanding of the oxidation state is critical to enhance our perception toward the emission mechanism.…”
mentioning
confidence: 99%