2022
DOI: 10.1021/acs.jpclett.1c04076
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Insights into the Oxidation State of Cu Dopants in II–VI Semiconductor Nanocrystals

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Cited by 11 publications
(8 citation statements)
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“…Previous reports established that Cu captures holes and that the electron remains free in the QD CB. 35 To further clarify the lifetime of photogenerated charge carriers, the PL decay spectra are performed in Figure 1e, and the fitting parameters are listed in Table S1. The PL lifetime for CdS QDs is about 48 ns, while a longer lifetime (355 ns) was observed for Cu:CdS QDs.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Previous reports established that Cu captures holes and that the electron remains free in the QD CB. 35 To further clarify the lifetime of photogenerated charge carriers, the PL decay spectra are performed in Figure 1e, and the fitting parameters are listed in Table S1. The PL lifetime for CdS QDs is about 48 ns, while a longer lifetime (355 ns) was observed for Cu:CdS QDs.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…In addition, the new emission center implies an introduction of a new sub-band gap state in CdS, which will offer a new charge transfer pathway in QDs. Previous reports established that Cu captures holes and that the electron remains free in the QD CB . To further clarify the lifetime of photogenerated charge carriers, the PL decay spectra are performed in Figure e, and the fitting parameters are listed in Table S1.…”
Section: Results and Discussionmentioning
confidence: 99%
“…These indicate that the emission of all the three samples is expected to originate from dopant related channels, similar to many Cu-doped nanocrystals. 41 In addition, the literature suggests that the formation of long-lived photogenerated states in copper-doped nanocrystals, lasting from tens to hundreds of microseconds, is presumably associated with carrier localization at deep localised traps. 35 Wherein, the shallow-delocalized traps of 1-CuInS and the deep-localized traps of 1-CuGaS and 2-CuGaS could also be reasonably explained.…”
Section: Resultsmentioning
confidence: 99%
“…Because of the external energy provided by visible light, the carriers in the VB of CdSe QDs were excited and injected into the CB of CdSe QDs. In most semiconductors, the occupied VB and the vacant CB existed simultaneously [38]. Electrons were injected from the VB to the CB upon excitation by the external energy.…”
Section: Photovoltaic Working Mechanism Of the Devicementioning
confidence: 99%