Schottky barrier inhomogeneity in (Pd / Au) Al0.22 Ga0.78N/GaN/SiC HEMT: Triple Gaussian distributions

Jabbari, Iraj; Baïra, M.; Maâref, H.; Mghaieth, Ridha

doi:10.1016/j.cjph.2021.08.011

Cited by 11 publications

(7 citation statements)

References 44 publications

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“…However, it can be explained by the model proposed by Werner et al [ 11 ]. The deviation of the Richardson plot from linearity indicates the temperature dependence of the BH and its inhomogeneity caused by potential fluctuations at the interface [ 29 , 30 , 31 ].…”

Section: Resultsmentioning

confidence: 99%

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

et al. 2022

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In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics. In the temperature range of 80–280 K, the ideality factor (n) and energy barrier height (φb) were found to be strongly temperature dependent. The φb increases with temperature rise, while the n value decreases. The observed dependencies are due to imperfections at the interface region of a heterojunction and the non-homogeneous distribution of the potential barrier heights. Values of the φb were calculated from I-V characteristics using the thermionic emission theory (TE). The plot of φb versus 1/2 kT revealed two distinct linear regions with different slopes in temperature regions of 80–170 K and 170–280 K. This indicates the existence of a double Gaussian distribution (DGD) in heterojunctions. Parameters such as mean barrier heights φ¯b and standard deviations σ were obtained from the plots linearization and read out from intercepts and slopes. They take values φ¯b = 1.06 eV, σ = 0.43 eV, respectively. The modified Richardson plot is drawn to show the linear behavior in these two temperature ranges, disclosing different values of the effective Richardson constants (A*).

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Section: Resultsmentioning

confidence: 99%

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

et al. 2022

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“…The obtained values are coherent with previous results obtained for lateral devices. [1][2][3][4][5][6][7][8] The microscopic analysis of the origin of these barrier height inhomogeneities is still an open question. In this work, we used RS and DLTS to try to identify the origin.…”

Section: Discussionmentioning

confidence: 99%

“…The same procedure with different temperature ranges distinction was previously used in different studies. [1,4,7,8] All the extracted parameters are listed in Table 1.…”

Section: Barrier Height Analysismentioning

confidence: 99%

“…Toward this end, as a first step, simple Schottky barrier diodes (SBD) were fabricated on GaN layers grown on GaN substrates to allow material characterization to be performed. Temperature variations of barrier height and ideality factor for GaN and AlGaN/GaN SBD have been previously observed by numerous authors [ 1–8 ] and attributed to barrier height ( ϕ B ) fluctuation according to Werner's original model. [ 9 ] In many cases, [ 1,4,7,8 ] two or three Gaussian distributions of the barrier height have been used to describe the behavior of ϕ B and ideality factor ( n ) with temperature.…”

Section: Introductionmentioning

confidence: 97%

“…Temperature variations of barrier height and ideality factor for GaN and AlGaN/GaN SBD have been previously observed by numerous authors [ 1–8 ] and attributed to barrier height ( ϕ B ) fluctuation according to Werner's original model. [ 9 ] In many cases, [ 1,4,7,8 ] two or three Gaussian distributions of the barrier height have been used to describe the behavior of ϕ B and ideality factor ( n ) with temperature. In addition to the pure thermionic emission (TE) model, thermionic field emission (TFE) has also been proposed to explain large ideality factors at low temperature.…”

Section: Introductionmentioning

confidence: 97%

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Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Dagher

Sonneville

Brémond

et al. 2023

Physica Status Solidi (a)

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Schottky barrier diodes on GaN on GaN substrates are fabricated for the purpose of material and technology characterization. The epitaxial layers are grown by MOCVD. I–V measurements as a function of the temperature in the range 80–480 K show ideality factor (n) and barrier height (ϕB) variations not following a thermionic (TE) model. Consequently, barrier height fluctuations are considered. In the temperature range 280–480 K, an average barrier height of 1.31 eV with a relatively large standard deviation (σ) of 0.15 eV is extracted using this model. The n(T) variation is also analyzed in order to extract the field sensibility of 1) the mean barrier height variation (ρ2 = −0.1) and 2) the barrier height standard deviation (ρ3 = −15 mV). The corrected Richardson plot using ϕB and σ values is linear and gives a Richardson constant of 31.5 A cm−2 K−2 close to the theoretical value of 26.4 A cm−2 K−2. For a deeper understanding of ϕB fluctuation origins, micro‐Raman mapping of the epitaxial layers and deep‐level transient spectroscopy (DLTS) are used. μ‐RS mappings show compressive strain for diodes having suffered electrical breakdown. DLTS analysis shows the presence of nine levels whose signatures are extracted and nature discussed.

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