Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation

Abstract

Pt-germanide Schottky contacts on crystalline germanium The lack of a stable native germanium oxide has been substrates, including the effect of inversion layer on I-V and the main obstacle for the use of Ge in complementary metal C-V characteristics as well as Schottky barrier engineering oxide-semiconductor CMOS devices. However, recent by germanidation induced dopant segregation. development of next generation deposited high-k gate dielectrics for Si also allows for the fabrication of 2. Experiments highperformance Ge-based metal-oxide-semiconductor 1-4244-1104-1/07/$25.00 ©)2007 IEEE.

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

“…The lack of a stable native Ge oxide has been the obstacle in the use of Ge in CMOS devices [11]. However, recent developments of the next generation deposited high-k gate dielectrics allow for the fabrication of high performance Ge-based metal-oxide semiconductor field effect transistors (MOSFETs) [11,12].…”

“…However, recent developments of the next generation deposited high-k gate dielectrics allow for the fabrication of high performance Ge-based metal-oxide semiconductor field effect transistors (MOSFETs) [11,12]. Low reactivity with oxygen in the high-k dielectric is expected in the germanide/high-k gate stack structure [13].…”

“…Although in previous studies focus has been on the reactions of germanium with Pd [6,[14][15][16][17][18][19][20][21][22][23], Pt [6,13,22,[24][25][26][27][28][29], and Ni [6,9,11,[13][14][15][16]22,[28][29][30][31][32][33][34][35][36][37][38], so far there is very little literature on reactions of germanium with Ir [39]. Gaudet et al [6] carried out a systematic study of thermally induced reaction of 20 transition metals with Ge substrates.…”