Schottky barrier formation at the Au to rare earth doped GaN thin film interface

McHale, Stephen R.; McClory, John W.; Petrosky, James C.; Wu, Jiao; Rivera, Adriana M.; Palai, R.; Losovyj, Ya. B.; Dowben, Peter A.

doi:10.1051/epjap/2011110082

Cited by 19 publications

(18 citation statements)

References 63 publications

(112 reference statements)

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“…The X-ray diffraction (XRD) patterns of Gd, Er, and Yb doped GaN films show c-axis orientation and a high degree of crystallinity. The presence of any secondary phases or spurious peaks has not been observed, as described elsewhere [18]. Slight shifts in diffraction peak positions toward lower Bragg angles have been observed with Er doped GaN grown on Al 2 O 3 (0 0 0 1) substrates and RE x Ga 1−x N thin films (50-300 nm) fabricated on Si(1 1 1) (RE = Gd, Yb), which is indicative of some lattice expansion, as is expected [26].…”

Section: Methodsmentioning

confidence: 90%

“…Due to their highly localized 4f electrons [16,17], the direct f -f interactions between the neighboring rare earth atoms are very weak and nonexistent in a weakly doped semiconductor host. In addition, rare earth doping is seen to increase the gold electrode Schottky barrier heights significantly [18] thereby decreasing leakage currents in particle type detector devices.…”

Section: Introductionmentioning

confidence: 99%

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Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f 14 occupancy.

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Section: Methodsmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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“…98,99 A rare-earth-doped GaN thin film might lead to significant improvements in device performance in sensor applications; GaN is potentially neutron sensitive when doped with Gd. 100,101 Melton et al 102 found that the carrier concentration in Gd-doped GaN increases as a result of the Gd doping. Cao and Myers employed a 500-nm superlattice doping structure grown by MBE to maintain the quality of the material.…”

Section: Neutron Detectionmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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“…A detailed description of the MBE with ultra-high vacuum (UHV) system, K cells, a quartz crystal thickness monitor, low energy electron diffraction (LEED) camera, heater can be found in many articles. [11][12][13][14]30,31 Briefly, the deposition UHV chamber was first pumped down to base pressure of 10 −10 torr, while substrate was annealed at 900 • C for 30-60 minutes in order to remove most impurity or residue gas. Before Si substrates were placed into the chamber, they were ultrasonically washed in the methanol solution followed by standard cleaning.…”

Section: Synthesis and Basic Characterization Of Gan Thin Filmsmentioning

confidence: 99%

“…Higher electron mobility and electron saturation velocity allow for higher frequency of operation, and fast responsivity. 3,4 To date, the synthesis of different types of GaN materials have been performed by using various technical routes, including pulsed laser deposition techniques, 5 electrochemical techniques, 6 hot filament chemical vapor deposition (HFCVD), 7 plasma enhanced CVD, 8 sputtering method, 9 spin coating method, 10 and molecular beam epitaxy (MBE), [11][12][13][14] among others.…”

Section: Introductionmentioning

confidence: 99%

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

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High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

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Schottky barrier formation at the Au to rare earth doped GaN thin film interface

Cited by 19 publications

References 63 publications

Resonant photoemission of rare earth doped GaN thin films

Resonant photoemission of rare earth doped GaN thin films

Review of using gallium nitride for ionizing radiation detection

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

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