Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

Abstract

Ballistic electron emission microscopy (BEEM) was performed to obtain nanoscale current versus bias characteristics of non-epitaxial Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data was averaged from thousands of spectra for various metal film thicknesses and then used to determine the attenuation length of the energetic charge carriers as a function of tip bias. We report the marked increase in attenuation length at biases near the Schottky barrier, providing evidence for the existence of coherent BEEM currents in Schottky diodes. These results provide additional evidence against the randomization of a charge carrier's momentum at the metal-semiconductor interface. thibado@uark.edu -2-

Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

“…16 This technique has been used to measure the Schottky barrier height of many different metal/semiconductor interfaces. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] Im et al took $800 spectra of the Pd/ SiC diode and showed a Gaussian distribution of Schottky barrier heights consistent with the Tung model. 35 For the W/n-Si(001) interface, immediately upon metal deposition, a Schottky barrier of 0.71 eV was measured.…”

“…BEEM probes the interfacial electrostatics of a metal-semiconductor junction by varying the injected carrier energy and tip location with meV energy resolution (∼0.02 eV) and nanometer spatial resolution, respectively [15]. This technique has been used to measure the Schottky barrier height of many different metal/semiconductor interfaces [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33]. H.-J.…”