Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

Durcan, Chris; Balsano, Robert; LaBella, V. P.

doi:10.1063/1.4922972

Cited by 12 publications

(8 citation statements)

References 38 publications

(77 reference statements)

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“…Understanding the physics of EBIC imaging in resistive switching devices has broader implications for the metrology of resistive switching. The direct observation of hot electron currents, for example, opens the door to other hot electron techniques such as ballistic electron emission microscopy (BEEM) and internal photoemission (IPE) [58][59][60] .…”

Section: Discussionmentioning

confidence: 99%

Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2-based devices. By comparing beam energy-dependent electron beam-induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam-induced current microscopy, it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

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Section: Discussionmentioning

confidence: 99%

Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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“…14 Schottky barrier mapping is performed by acquiring thousands of BEEM spectra on a grid of tip positions, which are then fit to the Bell and Kaiser (BK) model to extract the local threshold, from which a false-color image of the barrier height can be generated. 13,[15][16][17][18][19][20][21][22] Nanoscale localizations in the electrostatic barrier height are now detectable and when combined with modeling provide a new transformative means to visualize the interface electrostatics. 13 Improvements in correlating meV shifts in the local barrier height that occur due to incomplete silicide formation or inclusion of foreign species are needed and will extend the capabilities of the technique.…”

Section: Detection Of Silicide Formation In Nanoscale Visualization Omentioning

confidence: 99%

Detection of silicide formation in nanoscale visualization of interface electrostatics

Nolting

Durcan

LaBella

2017

Applied Physics Letters

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The ability to detect localized silicide formation at a buried metal semiconductor Schottky interface is demonstrated via nanoscale measurements of the electrostatic barrier. This is accomplished by mapping the Schottky barrier height of the Cr/Si(001) interface by ballistic electron emission microscopy (BEEM). Monte-Carlo modeling is employed to simulate the distributions of barrier heights that include scattering of the electrons that traverse the metal layer and a distribution of electrostatic barriers at the interface. The best agreement between the model and the data is achieved when specifying two barrier heights less than 60 meV from one another instead of a singular barrier. This provides strong evidence that localized silicide formation occurs that would be difficult to observe in averaged BEEM spectra or conventional current voltage measurements.

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“…5.2. Typically, changes in barrier heights due to silicide formation are on the order of tens of meV as has been observed when comparing annealed and non annealed W/Si measurements [41,44,103,43].…”

Section: Discussionmentioning

confidence: 97%

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

Nolting

Durcan

Gassner

et al. 2018

Journal of Applied Physics

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The electrostatic barrier at a metal semiconductor interface is visualized using nanoscale spatial and meV energetic resolution. A combination of Schottky barrier mapping with ballistic electron emission microscopy and computational modeling enables extraction of the barrier heights, the hot electron scattering, and the presence of localized charges at the interface from the histograms of the spectra thresholds. Several metal semiconductor interfaces are investigated including W/Si(001) using two different deposition techniques, Cr/Si(001), and mixed Au-Ag/Si(001). The findings demonstrate the ability to detect the effects of partial silicide formation in the W and Cr samples and the presence of two barrier heights in intermixed Au/Ag films upon the electrostatic barrier of a buried interface with nanoscale resolution. This has potential to transform the fundamental understanding of the relationship between electrostatic uniformity and interface structure for technologically important metal semiconductor interfaces.

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Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

Cited by 12 publications

References 38 publications

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Detection of silicide formation in nanoscale visualization of interface electrostatics

Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

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