Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

Balsano, Robert; Matsubayashi, Akitomo; LaBella, V. P.

doi:10.1063/1.4831756

Cited by 32 publications

(22 citation statements)

References 31 publications

(37 reference statements)

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“…The middle barrier height φ 2 is about 90 meV higher and attributed to WSi 2 /Si(001) and is the strongest contributor to the histogram at 62%. The highest barrier height, φ 3 is in good agreement with the Au/Si(001) barrier height and attributed to gold with only a small 10% contribution [91]. Fig.…”

Section: Multiple Barrier Height Modellingsupporting

confidence: 74%

“…However, the thin interface silicide that forms is most likely affecting the characteristic of the threshold region in these BEEM spectra. Image force lowering of the barrier height for these low doped silicon substrates is calculated to lower the sum of both gaps by 0.013 eV [90,91]. This lowering does not alter the agreement with the gap significantly or alter the choice of BEEM model, in contrast to Au, Ag, and Cu Schottky diodes on the same substrates where the BK model gave the best agreement with the Si band gap [91].…”

Section: Discussionmentioning

confidence: 85%

“…This causes the Schottky barrier from the fit to the average spectra to be less than the mean threshold from the distribution as averaging of multiple spectra with different onsets causes the average spectra to deviate from the linearity near the threshold [44]. However, the fit to the averaged spectra gives the best agreement to the band gap of the substrate and is used as the measured Schottky barrier height [91,44].…”

Section: Resultsmentioning

confidence: 99%

“…4.10 [41]. Au and Ag are miscible and intermixing of the two metals at the interface would allow both barrier heights to be measured (Ag/Si: 0.67 eV & Au/Si: 0.85 eV) [91]. The best fit was found with two barrier heights, where the addition of Coulomb scattering did [58,40,96].…”

Section: Multiple Barrier Height Modellingmentioning

confidence: 96%

“…The best fit was found with two barrier heights, where the addition of Coulomb scattering did [58,40,96]. The included region's barrier height is altered due to the continuity of the electrostatic potential at the interface [41,91,97,71]. The modeling predicts a Ag:Au barrier height ratio of 90:10 for the 30 nm thick silver and 18:82 for the 5 nm silver.…”

Section: Multiple Barrier Height Modellingmentioning

confidence: 98%

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Nanoscale Schottky barrier visualization utilizing computational modeling and ballistic electron emission microscopy

Nolting

Durcan

Gassner

et al. 2018

Journal of Applied Physics

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The electrostatic barrier at a metal semiconductor interface is visualized using nanoscale spatial and meV energetic resolution. A combination of Schottky barrier mapping with ballistic electron emission microscopy and computational modeling enables extraction of the barrier heights, the hot electron scattering, and the presence of localized charges at the interface from the histograms of the spectra thresholds. Several metal semiconductor interfaces are investigated including W/Si(001) using two different deposition techniques, Cr/Si(001), and mixed Au-Ag/Si(001). The findings demonstrate the ability to detect the effects of partial silicide formation in the W and Cr samples and the presence of two barrier heights in intermixed Au/Ag films upon the electrostatic barrier of a buried interface with nanoscale resolution. This has potential to transform the fundamental understanding of the relationship between electrostatic uniformity and interface structure for technologically important metal semiconductor interfaces.

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Section: Multiple Barrier Height Modellingsupporting

confidence: 74%