Scanning room-temperature photoluminescence in polycrystalline silicon

Koshka, Yaroslav; Ostapenko, S.; Tarasov, I.; McHugo, Scott A.; Kalejs, J.P.

doi:10.1063/1.123614

Cited by 47 publications

(30 citation statements)

References 8 publications

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“…3, a spectral analysis of the subbandgap luminescence reveals a broad peak with a maximum at around 1550 nm, indicating a rather broad distribution of energy states with a maximum located at around 0.8 eV away from the conduction or valence band. Similar spectra have previously been published by Tajima, 39 attributing their occurrence to oxygen clusters formed during annealing of Czochralski-grown silicon at around 470°C, and Koshka et al, 35 investigating multicrystalline edge-defined film-fed grown silicon by photoluminescence linking the 0.8 eV defect band to grain boundaries with accumulated impurities, such as oxygen.…”

Section: B Experimental Results and Discussionsupporting

confidence: 68%

“…However, not only metal impurities but also oxygen seems to play a major role. Especially, the broad subband-gap luminescence at around 0.8 eV detectable at room temperature in edge-defined filmfed grown silicon 35 as well as in block-cast mc-Si ͑Ref. 36͒ is most likely to be related to thermal donors or oxygen clusters bound to dislocations or trapped in the strain field of dislocations.…”

Section: B Light Emission From Forward-biased P-n Junctionsmentioning

confidence: 99%

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Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Bothe

Ramspeck

Hinken

et al. 2009

Journal of Applied Physics

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We study the emission of light from industrial multicrystalline silicon solar cells under forward and reverse biases. Camera-based luminescence imaging techniques and dark lock-in thermography are used to gain information about the spatial distribution and the energy dissipation at pre-breakdown sites frequently found in multicrystalline silicon solar cells. The pre-breakdown occurs at specific sites and is associated with an increase in temperature and the emission of visible light under reverse bias. Moreover, additional light emission is found in some regions in the subband-gap range between 1400 and 1700 nm under forward bias. Investigations of multicrystalline silicon solar cells with different interstitial oxygen concentrations and with an electron microscopic analysis suggest that the local light emission in these areas is directly related to clusters of oxygen.

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Section: B Experimental Results and Discussionsupporting

confidence: 68%

Section: B Light Emission From Forward-biased P-n Junctionsmentioning

confidence: 99%

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Bothe

Ramspeck

Hinken

et al. 2009

Journal of Applied Physics

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“…This stress can lead to the formation of areas with high dislocation density. In these areas, carrier lifetimes are reduced as shown by photoluminescence spectroscopy (PL) [51,52] and transmission electron microscopy (TEM). High stresses can be detected also in areas with a low dislocation density [53].…”

Section: Stress and Dislocationsmentioning

confidence: 99%

New Crystalline Si Ribbon Materials for Photovoltaics

Hahn¹,

Schönecker²,

Gutjahr³

2009

Advances in Materials Research

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Abstract. The objective of this chapter is to review, for photovoltaic application, the current status of crystalline silicon ribbon technologies as an alternative to wafers originating from ingots. Increased wafer demand, the current silicon feedstock shortage and the need of a substantial module cost reduction are the main issues that must be faced in the booming photovoltaic market. Ribbon technologies make excellent use of the silicon, as wafers are crystallised directly from the melt in the desired thickness and no kerf losses occur. Therefore, they offer a high potential to significantly reduce photovoltaic electricity costs when compared to wafers cut from ingots. Nevertheless, the defect structure present in the ribbon silicon wafers can limit material quality and cell efficiency. Ribbon GrowthTo provide an answer to the rapidly growing demand for cheap and easily available solar electricity, the photovoltaic industry is looking for more cost efficient and faster manufacturing processes for all steps of the value chain from silicon feedstock to crystallisation and wafering, cell processing and finally module fabrication. Silicon ribbons, as an alternative to silicon wafers that have been crystallised in the form of ingots and then cut into wafers, have, due to their higher silicon usage and potential for high production speed, significant advantages with respect to cost and throughput. However, a more complex technology and different wafer properties that often result in slightly lower conversion efficiencies are obstacles to be overcome.In principle, all ribbon processes have the characteristics that almost all silicon supplied into the process is converted into wafers. There is also no wafer cutting from a block, although in dependence upon the production method separation of larger sheets into wafers may be needed. Depending upon the type of crystallisation, silicon ribbon growth processes are either relatively slow processes, which can be run on rather low-cost equipment or high-speed processes operated with rather complex machinery.

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“…More recently his work has been extended to the study of intra-grain defects in polycrystalline silicon for photovoltaic applications [3]. S. Ostapenko et al at University of Florida have also published very fundamental results on PL mapping of carrier lifetime in relation with recombination centres in multicrystalline silicon [4]. Many results published since 2000 in the field of photovoltaics are due to T. Trupke et al at University of New South Wales [5][6][7].…”

Section: Introductionmentioning

confidence: 95%

Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements

Sayad

Blanc

Kaminski

et al. 2010

Phys. Status Solidi (c)

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The coordination geometries of the aqua ions of AmIII and CmIII are strikingly similar to those of the highly symmetric nona‐hydrated species in their triflate salts [M(H2O)9](CF3SO3)3. These findings are supported by single‐crystal X‐ray diffraction, EXAFS, and optical spectroscopy and are discussed by P. Lindqvist‐Reis and co‐workers in their Communication on page 919ff. The picture shows the characteristic orange luminescence from CmIII in aqueous solution and in the triflate salt, together with the molecular structure of the salt.

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Scanning room-temperature photoluminescence in polycrystalline silicon

Cited by 47 publications

References 8 publications

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

New Crystalline Si Ribbon Materials for Photovoltaics

Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements

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