Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in Silicon

Abstract

An electron beam induced current (EBIC) method using an Al-Si Schottky barrier has been developed and applied to the observation of oxidation-induced stacking faults in (001) silicon. The minority carriers in thermally-oxidized silicon have a very large diffusion length. Analysis of the Y-modulation image of a stacking fault is effective for correlating the EBIC image contrast with the induced-current variation. Increasing beam energy increases the depth of a Frank partial dislocation segment showing the maximum contrast. A deep dislocation segment shows a larger resolution than a shallow one, and a further increase in resolution results from an increase in the beam energy. The Schottky barrier method is applied to the evaluation of the electrical activity of stacking faults and to the examination of their annealing behavior.

On the intrinsic gettering in Fe-contaminated CzSi

“…14a) is Fnz = 105 cm-2. The contrasts, although being similar t o stacking faults, show distinct differences to typical stacking fault contrasts [18]. In the volume large diffuse contrasts and small point contrasts of high density N , > 2 x lo9 cm-3 are observed (Fig.…”

Influence of the Generation Distribution on the Calculated EBIC Contrast of Line Defects

“…9). This image was obtained using a Schottky diode, where the measured depletion width was W FS 1.8 pn [20]. From the known geometry of the fault it is easy to calculate the length of the projection onto the surface of that part of the fault boundary that lies in the depletion layer.…”

“…Since experiments indicate that only beam energy E = 40 keV. (Courtesy of S. Kawado) the bounding dislocation is electrically active [20], the line defect scheme applies to these defects as well.…”

“…, is R w 11 pm; evaluation of the EBIC image of Fig. 9 according to [20] yields FA m 26 pm, and hence R / c A w 0.42: this value was employed in the siinulations of Fig. 8.…”

Influence of chlorine implantation on phosphorus diffusivity and oxidation-induced defects in silicon

“…This halo, which is more evident in the enlarged EBIC image of Fig. 8, is usually not observed in stacking faults, where only the bounding partial dislocation is decorated [29].…”