On the intrinsic gettering in Fe-contaminated CzSi

Schmalz, K.; Kirscht, F.G.; Niese, S.; Richter, Hans; Kittler, M.; Seifert, W.; Babanskaya, I.; Klose, H.; Tittelbach‐Helmrich, K.; Schöneich, J.

doi:10.1002/pssa.2211000108

Cited by 9 publications

(1 citation statement)

References 14 publications

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“…[6], the data on the effect of iron on nucleation of silicon-oxide precipitates are contradictory. However, everyone agrees that iron enhances the final stage of growth of silicon-oxide precipitates, i.e., the formation of OSFs [113,141,[145][146][147][148][149]. Fujino et al [147] showed that the density of OSFs increased by nearly 5 orders of magnitude as iron surface contamination level increased from 3×10 11 cm -3 to 10 13 cm -3 .…”

Section: Analysis Of the Current Understanding Of Iron In Siliconmentioning

confidence: 99%

Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

Weber¹

2002

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Section: Analysis Of the Current Understanding Of Iron In Siliconmentioning

confidence: 99%

Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

Weber¹

2002

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Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

Kissinger¹,

Kissinger²,

Tittelbach‐Helmrich³

et al. 1992

Cryst. Res. Technol.

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Defect Engineering and Gettering in a High-voltage Substrate TechnolgyDefect engineering in the CZ-silicon high-voltage substrate technology with a polycrystalline support needs very deep denuded zones, which enclose the whole volume of the monocrystalline islands. The formation of crystal defects is compared in the substrate fabrication process with and without an outdiffusion annealing (15 h at 1250 "C), respectively. The gettering efficiency of the polycrystalline support and of the buried layer at the island bottom has been studied. The influence of the defect density and the heavy metal contamination on the device parameters has been investigated at a high voltage p-n-p lateral transistor.Das Defectengineering an CZ-Silizium-Hochvoltsubstraten mit polykristallinem Hilfstriger erfordert tiefe defektverarmte Zonen, die das gesamte Volumen der einkristallinen Inseln umfassen. Es wird die Entstehung von Kristalldefekten im Substratherstellungsprozerj mit und ohne Vortemperung zur Sauerstoffausdiffusion (1 5 h bei 1250 "C) verglichen. Die GetterEhigkeit des polykristallinen Hilfstriigers und des begrabenen Gebietes am Inselboden, sowie der EinfluD von Defektdichte und Konzentration von Schwermetallverunreinigungen auf die Bauelementeparameter eines Hochvolt-pn-p-Lateraltransistors wurden untersucht.

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Creation of Very Deep Denuded Zones for Defect Engineering in a High-Voltage Substrate Technology

Kissinger¹,

Kissinger²,

Tittelbach‐Helmrich³

1991

Phys. Stat. Sol. (a)

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On the intrinsic gettering in Fe-contaminated CzSi

Abstract: Oder)') ( a ) and Z~~t r a l~n s~i t u t fur Kernforschung der Akademie der Wissenschaften der D D R , Rossendorf2) (b)

Cited by 9 publications

References 14 publications

Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

Impurity Precipitation, Dissolution, Gettering and Passivation in PV Silicon: Final Technical Report, 30 January 1998--29 August 2001

Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

Creation of Very Deep Denuded Zones for Defect Engineering in a High-Voltage Substrate Technology

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