Creation of Very Deep Denuded Zones for Defect Engineering in a High-Voltage Substrate Technology

Kissinger, G.; Kissinger, W.; Tittelbach‐Helmrich, K.

doi:10.1002/pssa.2211260204

Phys. Stat. Sol. (a)

1991

DOI: 10.1002/pssa.2211260204

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Creation of Very Deep Denuded Zones for Defect Engineering in a High-Voltage Substrate Technology

G. Kissinger¹,

W. Kissinger²,

K. Tittelbach‐Helmrich³

Abstract: The creation of very deep denuded zones (80 to 100 μm) in CZ‐silicon wafers under a protectional oxide by one‐step and two‐step annealing at 1250 °C in nitrogen as a basic process for defect engineering in high‐voltage substrate technology is discussed. Special attention is paid to the study of volume defects.

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1992

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Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

Kissinger¹,

Kissinger²,

Tittelbach‐Helmrich³

et al. 1992

Cryst. Res. Technol.

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Defect Engineering and Gettering in a High-voltage Substrate TechnolgyDefect engineering in the CZ-silicon high-voltage substrate technology with a polycrystalline support needs very deep denuded zones, which enclose the whole volume of the monocrystalline islands. The formation of crystal defects is compared in the substrate fabrication process with and without an outdiffusion annealing (15 h at 1250 "C), respectively. The gettering efficiency of the polycrystalline support and of the buried layer at the island bottom has been studied. The influence of the defect density and the heavy metal contamination on the device parameters has been investigated at a high voltage p-n-p lateral transistor.Das Defectengineering an CZ-Silizium-Hochvoltsubstraten mit polykristallinem Hilfstriger erfordert tiefe defektverarmte Zonen, die das gesamte Volumen der einkristallinen Inseln umfassen. Es wird die Entstehung von Kristalldefekten im Substratherstellungsprozerj mit und ohne Vortemperung zur Sauerstoffausdiffusion (1 5 h bei 1250 "C) verglichen. Die GetterEhigkeit des polykristallinen Hilfstriigers und des begrabenen Gebietes am Inselboden, sowie der EinfluD von Defektdichte und Konzentration von Schwermetallverunreinigungen auf die Bauelementeparameter eines Hochvolt-pn-p-Lateraltransistors wurden untersucht.

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Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

Kissinger¹,

Kissinger²,

Tittelbach‐Helmrich³

et al. 1992

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

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Creation of Very Deep Denuded Zones for Defect Engineering in a High-Voltage Substrate Technology

Cited by 1 publication

References 14 publications

Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

Defect Engineering and Gettering in a High‐voltage Substrate Technolgy

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