Scaling, subthreshold, and leakage current matching characteristics in high-temperature (25 degrees C-250 degrees C) VLSI CMOS devices

Shoucair, F.S.

doi:10.1109/33.49047

Cited by 28 publications

(14 citation statements)

References 25 publications

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“…Although such circuits were shown operational at very high temperature, they suffered from significant voltage droop during the hold phase due to increased switch leakage current. This prompted a rejection of switched-capacitor circuits for high resolution applications, due to a perceived resolution-speed tradeoff [11]. However, the use of fully differential switched-capacitor circuits for high-temperature operation was not addressed.…”

Section: Introductionmentioning

confidence: 98%

“…Insulated technologies prevent the reverse-biased diode leakage current that is problematic to designs in standard CMOS at high temperatures, as will be discussed. In standard CMOS, switched-capacitor circuits have been shown to be operational to temperatures as high as 275 C [4], [11]. Although such circuits were shown operational at very high temperature, they suffered from significant voltage droop during the hold phase due to increased switch leakage current.…”

Section: Introductionmentioning

confidence: 99%

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A 14-bit high-temperature ΣΔ modulator in standard cmos

Davis¹,

Finvers²

2003

IEEE J. Solid-State Circuits

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Experimental verification is given for the use of 61 modulation for high-temperature applications ( approximately 150 C) in a standard CMOS process. Switched-capacitor circuits are used to implement a second-order single-stage and a third-order 2-1 MASH 61 modulator with single-bit quantization. The two modulators have an oversampling ratio of 256 with an input signal bandwidth of 500 Hz. The modulators were fabricated in a 1.5-m standard CMOS technology. A fully differential signal path and near minimum sized switches are used to mitigate the effect of large junction-to-substrate leakage current present at high temperatures. Experimental results show both modulators are capable of over 14 bits of resolution at 225 C and over 13 bits of resolution at 255 C. Results show that the single-stage modulator is more resistant to high-temperature circuit impairment than is the MASH cascaded structure.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

A 14-bit high-temperature ΣΔ modulator in standard cmos

Davis¹,

Finvers²

2003

IEEE J. Solid-State Circuits

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“…The bandwidth can be expressed as BW = ω p (1+βA v ), where ω p is the 3-dB frequency and β is the feedback factor. Furthermore, the increased temperature reduces the bandwidth [15,16]. The amplifier achieves an integrated noise of less than 2 µV rms over the temperature range from −5 • C to 45 • C. The IRN of the CCIA, V 2 n,in , can be expressed as…”

Section: Circuit Implementationmentioning

confidence: 99%

A 0.6-µW Chopper Amplifier Using a Noise-Efficient DC Servo Loop and Squeezed-Inverter Stage for Power-Efficient Biopotential Sensing

Pham

Nguyen

et al. 2020

Sensors

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To realize an ultra-low-power and low-noise instrumentation amplifier (IA) for neural and biopotential signal sensing, we investigate two design techniques. The first technique uses a noise-efficient DC servo loop (DSL), which has been shown to be a high noise contributor. The proposed approach offers several advantages: (i) both the electrode offset and the input offset are rejected, (ii) a large capacitor is not needed in the DSL, (iii) by removing the charge dividing effect, the input-referred noise (IRN) is reduced, (iv) the noise from the DSL is further reduced by the gain of the first stage and by the transconductance ratio, and (v) the proposed DSL allows interfacing with a squeezed-inverter (SQI) stage. The proposed technique reduces the noise from the DSL to 12.5% of the overall noise. The second technique is to optimize noise performance using an SQI stage. Because the SQI stage is biased at a saturation limit of 2VDSAT, the bias current can be increased to reduce noise while maintaining low power consumption. The challenge of handling the mismatch in the SQI stage is addressed using a shared common-mode feedback (CMFB) loop, which achieves a common-mode rejection ratio (CMRR) of 105 dB. Using the proposed technique, a capacitively-coupled chopper instrumentation amplifier (CCIA) was fabricated using a 0.18-µm CMOS process. The measured result of the CCIA shows a relatively low noise density of 88 nV/rtHz and an integrated noise of 1.5 µVrms. These results correspond to a favorable noise efficiency factor (NEF) of 5.9 and a power efficiency factor (PEF) of 11.4.

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“…2 [7]. Higher temperatures lead to a breakdown of the pn-junction between well and substrate and consequently of the sensor.…”

Section: Introductionmentioning

confidence: 97%

A GasFET concept for high temperature operation

et al. 2008

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A new concept for high temperature gas detection with a floating gate field effect transistor (FG-FET) will be presented. The function of the FG-FET is based on measuring work function changes due to an adsorption and desorption process of gas molecules on a sensing film. All existing concepts are working in a temperature range from room temperature up to 200 • C. Higher temperature leads to significant leakage current in the transducer electronics and consequently to device breakdown. The new concept has two key benefits. Firstly, a full isolation achieved by using SOI-substrates and secondly a vertical MOSFET with high doping concentrations in the channel region. Both improvements lead to an extension of the temperature range up to 350 • C. This increases the range of layers for chemical sensitive gasdetection and allows the operation in hot ambiance.

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Scaling, subthreshold, and leakage current matching characteristics in high-temperature (25 degrees C-250 degrees C) VLSI CMOS devices

Cited by 28 publications

References 25 publications

A 14-bit high-temperature ΣΔ modulator in standard cmos

A 14-bit high-temperature ΣΔ modulator in standard cmos

A 0.6-µW Chopper Amplifier Using a Noise-Efficient DC Servo Loop and Squeezed-Inverter Stage for Power-Efficient Biopotential Sensing

A GasFET concept for high temperature operation

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