A GasFET concept for high temperature operation

Iskra, P.; Senft, C.; Kulaga-Egger, D.; Sulima, T.; Eisele, I.

doi:10.1109/icsens.2008.4716683

Cited by 3 publications

(3 citation statements)

References 5 publications

(5 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ones assisted by a sterical selectivity mechanism like molecular imprinted polymers (MIPS), zeolites and the newly investigated mesoporous oxides [ 173 ]. The other tendency is research on new variants of the GasFET transducers that will allow operation temperatures above the normal Si-regime [ 174 ]. In the future, this might close the gap between high-temperature operated semiconducting metal oxides and work function devices.…”

Section: Field Effect Sensorsmentioning

confidence: 99%

Solid State Gas Sensor Research in Germany – a Status Report

Moos

Sahner

Fleischer

et al. 2009

Sensors

136

View full text Add to dashboard Cite

This status report overviews activities of the German gas sensor research community. It highlights recent progress in the field of potentiometric, amperometric, conductometric, impedimetric, and field effect-based gas sensors. It is shown that besides step-by-step improvements of conventional principles, e.g. by the application of novel materials, novel principles turned out to enable new markets. In the field of mixed potential gas sensors, novel materials allow for selective detection of combustion exhaust components. The same goal can be reached by using zeolites for impedimetric gas sensors. Operando spectroscopy is a powerful tool to learn about the mechanisms in n-type and in p-type conductometric sensors and to design knowledge-based improved sensor devices. Novel deposition methods are applied to gain direct access to the material morphology as well as to obtain dense thick metal oxide films without high temperature steps. Since conductometric and impedimetric sensors have the disadvantage that a current has to pass the gas sensitive film, film morphology, electrode materials, and geometrical issues affect the sensor signal. Therefore, one tries to measure directly the Fermi level position either by measuring the gas-dependent Seebeck coefficient at high temperatures or at room temperature by applying a modified miniaturized Kelvin probe method, where surface adsorption-based work function changes drive the drain-source current of a field effect transistor.

show abstract

Section: Field Effect Sensorsmentioning

confidence: 99%

Solid State Gas Sensor Research in Germany – a Status Report

Moos

Sahner

Fleischer

et al. 2009

Sensors

136

View full text Add to dashboard Cite

show abstract

“…A smart meter used in the conducted tests was electronic three-phase Iskra MT372 meter of accuracy class B. The examined meter enables [9]:…”

Section: Methodsmentioning

confidence: 99%

The temperature effect on measurement accuracy of the smart electricity meter

Węgierek

Konarski

2016

ELECTROTECHNICAL REVIEW

View full text Add to dashboard Cite

The paper presents an analysis of ambient temperature influence on measurement accuracy of the smart electricity meter for different values of load current, voltage and frequency. The research scope was covered by the operating temperature range from-40°C to +70°C, which is consistent with the requirements of applicable standards and legal regulations. A meter used in the conducted tests was Iskra MT372 model, which is currently being installed at final customers. Streszczenie. W artykule przedstawiono analizę wpływu temperatury otoczenia na dokładność pomiarów inteligentnego licznika energii elektrycznej dla różnych wartości prądu obciążenia, napięcia i częstotliwości. Badania swoim zakresem objęły temperatury od-40ºC do +70ºC, co jest zgodne z wymaganiami stawianymi inteligentnym licznikom zarówno przez normy, jak i regulacje prawne. W badaniach wykorzystano obecnie instalowany u odbiorców licznik typu Iskra MT372. (Wpływ temperatury na dokładność inteligentnego licznika energii elektrycznej).

show abstract

“…Since then, FET type sensors have been further improved with device structures such as suspended gate and floating gate [6,7]. Due to the narrow energy bandgap of Si, the operating temperature is limited to 200 °C [8]. Higher operating temperatures are frequently necessary to enhance the gas detection properties such as selectivity, sensitivity and response/recovery times.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Sokolovskij

Zhang

Jiang

et al. 2018

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

View full text Add to dashboard Cite

Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H2S and compare them to H2 and NO2. Finally we demonstrate recent results of NO2 detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices.

show abstract

A GasFET concept for high temperature operation

Cited by 3 publications

References 5 publications

Solid State Gas Sensor Research in Germany – a Status Report

Solid State Gas Sensor Research in Germany – a Status Report

The temperature effect on measurement accuracy of the smart electricity meter

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Contact Info

Product

Resources

About