Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Drain current model for short-channel triple gate junctionless nanowire transistors

“…1) Through tridimensional numerical simulations for 3G JNTs with long (L = 1000 nm) and short (L = 30 nm) channel and different values of H FIN to verify the implementation of the correction in the internal potential for a wide range of silicon layer. 2) Through experimental data of 3G JNTs fabricated at CEA -Leti, devices with different channel lengths, fin widths and doping concentration are compared to modeled curves [26].…”

“…Model validation is performed with both three-dimensional numerical simulations and experimental measurements performed on SOI 3G JNTs fabricated at CEA -Leti [26] with channel width and gate length down to 7 nm and 15 nm, respectively.…”

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

“…However, the short channel effect is exacerbated as the channel length decreases. Three-dimensional (3-D) multi-gate structures, such as double-gate, tri-gate, and gate-all-around (GAA) structures, have been proposed to improve gate controllability and protect against the short-channel effects of nanoscale transistors [17][18][19][20][21][22][23][24]. Therefore, a tri-gate fin-like structure with a channel length (L) of 0.2 µm was employed in this study.…”

Transformation invariant local element size specification

“…In many applications, like a geometry optimization process of a semiconductor device, multiple simulations of different objects are performed [7]. The geometries of these objects often are very similar and only differ in specific regions or geometric features, like the gate length of a transistor device.…”