Scaling of InP/GaAsSb DHBTs: A Simultaneous &lt;tex&gt;$f_{\text{T}}/f_{\text{MAX}}=463/829$&lt;/tex&gt; GHz in a &lt;tex&gt;$10\ \mu \text{m}$&lt;/tex&gt; Long Emitter

Arabhavi, Akshay M.; Quan, Wei; Ostinelli, O.; Bolognesi, C. R.

doi:10.1109/bcicts.2018.8551036

Cited by 11 publications

(10 citation statements)

References 8 publications

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“…The extrinsic base-collector junction area was also aggressively undercut by wet etching until the base contact width was equal to one transfer length. We show (0.25 × 4.4) μm 2…”

mentioning

confidence: 85%

“…In our previous works [2], the heavily doped 165 nm InP/GaInAs emitter layers prevented the shorting of the emitter with the self-aligned (to the emitter) base metal. The fabrication flow for these devices is reported elsewhere [2].…”

Section: Device Fabricationmentioning

confidence: 98%

“…The base layer also involves a linear grading of the carbon p-doping with an average level of 8.5 × 10 19 cm −3 . The overall structure is similar to [2], except for a thinner 20 nm n+ InP emitter and 10 nm GaInAs emitter contact layers to minimize the emitter undercut etching.…”

Section: Device Fabricationmentioning

confidence: 99%

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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record f MAX = 1.2 THz, a simultaneous f T = 475 GHz, and BV CEO = 5.4 V. The resulting BV CEO × f MAX = 6.48 THz-V is unparalleled in semiconductor technology. Devices were realized with a 20-nm-thick compositionally and impurity graded GaAsSb-base and a 125-nm InP collector. The performance arises because the process allows: 1) a tunable base-emitter access distance down to 10 nm; 2) the use of thicker base contact metals; and 3) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the base-collector (B/C) mesa. Perhaps more significantly, InP/GaAsSb DHBTs with f MAX ≥ 1 THz are demonstrated with emitter lengths as long as 9.4 μm and areas as high as 1.645 μm 2 . Such an area is >6× larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance level is achieved with a very low dissipated power density which makes InP/GaAsSb DHBTs well-suited for high-efficiency millimeter-and submillimeter-wave applications. Furthermore, we provide the first large-signal characterization of a THz transistor with 94 GHz load-pull measurements showing a peak power-added-efficiency (PAE) of 32.5% (40% collector efficiency) and a maximum saturated power of 6.67 mW/μm 2 or 1.17 mW/μm of emitter length in a common-emitter configuration. Devices operate stably under large-signal conditions, with voltages nearly twice higher than those for peak small-signal performance.

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“…The extrinsic base-collector junction area was also aggressively undercut by wet etching until the base contact width was equal to one transfer length. We show (0.25 × 4.4) μm 2…”

mentioning

confidence: 85%

Section: Device Fabricationmentioning

confidence: 98%

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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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“…Traditionally, f M AX is extrapolated to zero from U (f ) characteristics as demonstrated in [9], [10] with U being the Mason's gain [11]…”

mentioning

confidence: 99%

“…In [10], a single pole transfer function is fitted to U (f ) allowing to determine f M AX by the intercept of the fitted line with the x-axis. In both the works, the extrapolated f M AX values are more than 1 decade higher than the measurement range.…”

mentioning

confidence: 99%

Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f_MAX Estimation From Measured Data

Saha

Fregonèse

Heinemann

et al. 2021

IEEE Electron Device Lett.

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Maximum oscillation frequency (fMAX ) of mmwave transistors is one of the key figures of merit (FOMs) for evaluating the HF-performance of a given technology. However, accurate measurements of fMAX are very difficult. Determination of fMAX is significantly affected by the measurement uncertainties in the admittance (y) parameters. In order to get rid of the random measurement error and to obtain a reliable and stable fMAX value, the frequency dependent y-parameters are described by rational functions formulated from the smallsignal hybrid π-model of the transistor under investigation. The parameters of these functions are determined following a least square error technique that minimizes the functional error with the measured data. The approach is especially useful for a fast and reliable evaluation of fMAX value. Devices from two different SiGe and an FDSOI (Fully Depleted Silicon On Insulator) MOS technology are measured and stable fMAX values are estimated following this approach.Index Terms-SiGe HBTs; MOS; y-parameters; maximum oscillation frequency; analytical modeling; small-signal model. I. INTRODUCTIONT HE demand for increased functionality and speed of modern communication system drives the evaluation of various transistor technologies [1]. These unique technologies differ from one another in terms of doping profiles, geometries and structures. In this rapid development, heterojunction bipolar transistors (HBTs) or advanced CMOS technologies find applications in millimeter and sub-millimeter wave frequency range [2], [3], [4], [5]. In this region of applications, realizations of power amplifiers and low noise amplifiers are limited by transit frequency (f T ) and maximum oscillation frequency (f M AX ). Also to achieve the required functionality, f T and Manuscript received October 02, 2020; revised November 20, 2020. This work is partly funded by the French nouvelle Aquitaine Authorities through the FAST project. The research leading to these results has received funding from the European Commission's ECSEL Joint Undertaking under grant agreement n • 737454 -project TARANTO -and the respective Public Authorities of France,

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The 25‐Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors

Bolognesi

2023

75th Anniversary of the Transistor

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Scaling of InP/GaAsSb DHBTs: A Simultaneous <tex>$f_{\text{T}}/f_{\text{MAX}}=463/829$</tex> GHz in a <tex>$10\ \mu \text{m}$</tex> Long Emitter

Cited by 11 publications

References 8 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f_MAX Estimation From Measured Data

The 25‐Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors

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Scaling of InP/GaAsSb DHBTs: A Simultaneous <tex>$f_{\text{T}}/f_{\text{MAX}}=463/829$</tex> GHz in a <tex>$10\ \mu \text{m}$</tex> Long Emitter

Cited by 11 publications

References 8 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

Reliable Technology Evaluation of SiGe HBTs and MOSFETs: fMAX Estimation From Measured Data

The 25‐Year Disruptive Path of InP/GaAsSb Double Heterojunction Bipolar Transistors

Contact Info

Product

Resources

About

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Reliable Technology Evaluation of SiGe HBTs and MOSFETs: f_MAX Estimation From Measured Data