Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire

Abstract

Articles you may be interested inAtomistic modeling of electron-phonon interaction and electron mobility in Si nanowires J. Appl. Phys. 111, 063720 (2012); 10.1063/1.3695999Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxidesemiconductor field-effect transistors Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering J. Appl. Phys.A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electronphonon interactionsWe theoretically investigate the interaction between modulated acoustic phonons and electrons in a free-standing cylindrical semiconductor nanowire and calculate the electron mobility limited by modulated acoustic phonons in a ͓001͔-oriented silicon nanowire ͑SiNW͒ at room temperature. The mobility is smaller than that limited by bulk phonons because form factors increase due to acoustic phonon modulation. By expressing the form factor increase through an analytical formula, we derive a compact formula for mobility that is valid for a nanowire in which most electrons occupy the lowest subband, regardless of the wire material. The compact formula achieves excellent accuracy for a ͓001͔-oriented SiNW with a radius of less than 2 nm at an electron density of 2 ϫ 10 9 m −1 , and its applicable radius increases with decreasing electron density

Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires

“…The vertical axis is divided by ζ ≡ (2 + 3λ/μ) −1 to be valid for any wire material, and the horizontal axis q z is multiplied by wire radius a to be valid for any wire radius. A compact model of electron mobility based on this universality is also found in the literature [26]. As has been seen in the case of slabs, the form factor increase due to phonon modulation is observed for any set of initial/final electronic states.…”

“…Figure 19 shows the form factor increase ratio ΔI mn,m n / I mn,m n ;bulk = (I mn,m n − I mn,m n ;bulk )/I mn,m n ;bulk calculated using modulated acoustic phonons, plotted as a function of q z a [26]. The electron wave functions in an infinite The ratio of the electron mobility calculated using modulated acoustic phonons to that calculated using bulk phonons cylindrical well potential are used for simplicity, and the initial electronic state is taken to be (0, 1).…”

“…The electron wave functions in an infinite cylindrical well potential are used for simplicity, and the initial electronic state is taken to be (0, 1) where m * c (= m * z ) is the conductivity mass. In (69), the form factor I mn,m n (q z ) is given by [25,26] I mn,m n (q z ) = ρL z v 2 l m p ,q l ω 2 m n A l J m p (q l r)e im p θ mn 2 .…”

“…The researches on the acoustic phonon modulation and its impact on electron-phonon interaction have so far been reported for a free-standing slabs [1][2][3][4][5][6][7], III-V semiconductor heterostructures [8][9][10][11], Si/SiO 2 interface in metal-oxidesemiconductor field-effect-transistors (MOSFETs) [12,13], double-gate or silicon-on-insulator (SOI) MOSFETs [14], free-standing wires [15][16][17][18][19][20][21][22][23][24][25][26], layered wires [27][28][29][30][31][32][33], onedimensional quantum dot array (wire heterostructures) [34,35], free-standing dots [36], embedded spheres (dots) [37][38][39], hollow spheres and nanotubes [40]. All of those analyses are based on the fundamental physics of elastic waves in solids [41,42] and basic theory of solid-state physics.…”

Silicon Nanowire Waveguides and Their Applications in Planar Wavelength Division Multiplexers/Demultiplexers

“…Their basic characteristics have been investigated, and many functional devices have been demonstrated by using these waveguide structures. Various compact components based on Si nanowires, e.g., filters (Yamada et al, 2003), multiplexers (Chu et al, 2006), photonics crystals (Rue et al, 2006), as well as a number of active devices like lasers (Rong et al, 2005), modulators (Hattori et al, 2010), and switches (Belotti et al, 2010), were studied in the recent years.…”