Effect of confined acoustic phonons on the electron mobility of rectangular nanowires

Tienda-Luna, I. M.; Ruiz, Francisco G.; Godoy, A.; Donetti, L.; Martinez-Blanque, C.; Gámiz, F.

doi:10.1063/1.4825210

Cited by 9 publications

(4 citation statements)

References 22 publications

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“…The most prominent effects are confined bands and band gaps, acoustic modes with nonzero frequencies at q = 0 (q is the phonon wave vector), nonlinear dispersion for small q, and a complex displacement field [16][17][18][19][20][21][22][23][24]. Consequently, anomalies in thermal conductivity [25][26][27][28][29][30][31] and electron-phonon interactions [32][33][34][35] were predicted and strategies for their tailoring in NWs were suggested [36].…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics of endotaxial silicide nanowires

et al. 2020

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Self-organized silicide nanowires are considered as building blocks of future nanoelectronics and have been intensively investigated. In nanostructures, the lattice vibrational waves (phonons) deviate drastically from those in bulk crystals, which gives rise to anomalies in thermodynamic, elastic, electronic, and magnetic properties. Hence a thorough understanding of the physical properties of these materials requires a comprehensive investigation of the lattice dynamics as a function of the nanowire size. We performed a systematic lattice dynamics study of endotaxial FeSi 2 nanowires, forming the metastable, surface-stabilized α phase, which are in-plane embedded into the Si(110) surface. The average widths of the nanowires ranged from 24 to 3 nm, and their lengths ranged from several micrometers to about 100 nm. The Fe-partial phonon density of states, obtained by nuclear inelastic scattering, exhibits a broadening of the spectral features with decreasing nanowire width. The experimental data obtained along and across the nanowires unveiled a pronounced vibrational anisotropy that originates from the specific orientation of the tetragonal α-FeSi 2 unit cell on the Si(110) surface. The results from first-principles calculations are fully consistent with the experimental observations and allow for a comprehensive understanding of the lattice dynamics of endotaxial silicide nanowires.

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Section: Introductionmentioning

confidence: 99%

Lattice dynamics of endotaxial silicide nanowires

et al. 2020

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“…The most prominent effects are con-fined bands and band gaps, acoustic modes with non-zero frequencies at q = 0 (q is the phonon wave vector), nonlinear dispersion for small q and a complex displacement field [16][17][18][19][20][21][22][23][24]. Consequently, anomalies in thermal conductivity [25][26][27][28][29][30][31][32] and electron-phonon interactions [33][34][35][36] were predicted and strategies for their tailoring in NWs were suggested [37].…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics of endotaxial silicide nanowires

Kalt,

Sternik,

Krause

et al. 2020

Preprint

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Self-organized silicide nanowires are considered as main building blocks of future nanoelectronics and have been intensively investigated. In nanostructures, the lattice vibrational waves (phonons) deviate drastically from those in bulk crystals, which gives rise to anomalies in thermodynamic, elastic, electronic, and magnetic properties. Hence, a thorough understanding of the physical properties of these materials requires a comprehensive investigation of the lattice dynamics as a function of the nanowire size. We performed a systematic lattice dynamics study of endotaxial FeSi2 nanowires, forming the metastable, surface-stabilized α-phase, which are in-plane embedded into the Si(110) surface. The average widths of the nanowires ranged from 24 to 3 nm, their lengths ranged from several µm to about 100 nm. The Fe-partial phonon density of states, obtained by nuclear inelastic scattering, exhibits a broadening of the spectral features with decreasing nanowire width. The experimental data obtained along and across the nanowires unveiled a pronounced vibrational anisotropy that originates from the specific orientation of the tetragonal α-FeSi2 unit cell on the Si(110) surface. The results from first-principles calculations are fully consistent with the experimental data and allow for a comprehensive understanding of the lattice dynamics of endotaxial silicide nanowires.

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“…Thus, the reduction of the thermal conductivity and the characteristic of the carrier mobility in core/shell NWs are directly linked to the confinement effects on the phonon dispersion relation. [21][22][23][24][25] Also, it is important to remark that the core/shell wire structures are useful for optical applications 26,27 and for quantum computing engineering with spin qubits. 28,29 Several works have been devoted to obtain the acoustic phonon dispersion in wires and core/shell nanowires using both ab initio calculations 30,31 and phenomenological continuum approaches (see Refs.…”

Section: Introductionmentioning

confidence: 99%

Electron–acoustic-phonon interaction in core/shell Ge/Si and Si/Ge nanowires

2017

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General expressions for the electron-and hole-acoustic-phonon deformation potential Hamiltonians (HE−DP ) are derived for the case of Ge/Si and Si/Ge core/shell nanowire structures (NWs) with circular cross section. Based on the short-range elastic continuum approach and on derived analytical results, the spatial confinement effects on the phonon displacement vector, the phonon dispersion relation and the electron-and hole-phonon scattering amplitudes are analyzed. It is shown that the acoustic displacement vector, phonon frequencies and HE−DP present mixed torsional, axial, and radial components depending on the angular momentum quantum number and phonon wavevector under consideration. The treatment shows that bulk group velocities of the constituent materials are renormalized due to the spatial confinement and intrinsic strain at the interface. The role of insulating shell on the phonon dispersion and electron-phonon coupling in Ge/Si and Si/Ge NWs are discussed.

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Effect of confined acoustic phonons on the electron mobility of rectangular nanowires

Cited by 9 publications

References 22 publications

Lattice dynamics of endotaxial silicide nanowires

Lattice dynamics of endotaxial silicide nanowires

Lattice dynamics of endotaxial silicide nanowires

Electron–acoustic-phonon interaction in core/shell Ge/Si and Si/Ge nanowires

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