Scalable Synthesis of Ga₂O₃/N‐Doped C Nanopapers as High‐Rate Performance Anode for Li‐Ion Batteries

Abstract

Ga2O3 is a promising anode material for lithium ion batteries (LIBs) owing to its high theoretical capacity and low lithiation potential. However, its performance improvement has been seriously hindered by the sluggish reaction kinetics. Herein, Ga2O3/N doped C nanopapers (Ga2O3/NC NPs) are firstly designed and synthesized via a scalable biomass‐aided approach. The as‐prepared Ga2O3/NC NPs deliver high reversible capacity and prominent rate capability as anode for LIBs, owing to its excellent reaction kinetics. It shows high discharge capacity of 477 mAh g−1 after 200 cycles at 0.2 A g−1, without obvious capacity attenuation upon cycling. After 3 periodic rate performance testing ranging from 0.1 to 1.6 A g−1, the reversible capacity of the Ga2O3/NC NPs still retains to 517 mAh g−1 when the current is reverting to 0.1 A g−1. The low and safe working potential, the prominent electrochemical performance and the scalable synthesis method for the Ga2O3/NC NPs endow it with great promising toward practical application.

Ga2O3 Quantum Dots with N-Doped Amorphous Carbon Fixed for Efficient Storage and Transfer of Lithium Ions by Introduction of Dopamine Hydrochloride

“…There is also a peak located at 532.6 eV corresponding to the C–O bond in the O 1s spectrum, indicating that the dispersed Ga 2 O 3 nanoparticles also formed a stable combination with the C coated on the outside. There are three obvious peaks in the C 1s spectrum in Figure i, located at 284.3, 285.3, and 287.9 eV, and the peak at 285.3 eV corresponds to the C–N bond, which also means N was uniformly doped in the C layer. , …”

“…There are three obvious peaks in the C 1s spectrum in Figure 3i, located at 284.3, 285.3, and 287.9 eV, and the peak at 285.3 eV corresponds to the C−N bond, which also means N was uniformly doped in the C layer. 18,31 The electrochemical test results of Ga 2 O 3 -QD@NC and Ga 2 O 3 cells are as follows. As Figure S5a shows, the initial discharge capacity of the Ga 2 O 3 electrode is 1078 mAh g −1 at 0.1 A g −1 , and then the capacity rapidly decreased to 381 mAh g −1 after six cycles.…”

Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors

“…2(a), including Ga 3d, Ga 3p, Ga 3s, C 1s, N1s, O 1s, Ga 2p together with Ga LMM, O KLL Auger lines. 42,43 The peak of C 1s has been calibrated at 284.8 eV, derived from hydrocarbons and carbon dioxide adsorbed on the film surface. 35,44,45 The peaks located at 1144.8 eV, 1117.8 eV, and 20.2 eV correspond to Ga2p 1/2 , Ga2p 3/2 , and Ga3d, respectively.…”

Si–Ni Nanofoam Composites with a 3D Nanoporous Structure as a High-Loading Lithium-Ion Battery Anode

“…The 1st and 2nd discharge capacities are 2.39 and 2.00 mAh cm –2 (2272 and 1901 mAh g –1 ), respectively. The irreversible capacity loss could be attributed to the irreversible formation of solid electrolyte interphase (SEI) films as well as the irreversible pulverization and shedding of Si particles. − The former is common to most anode materials, while the latter is mainly ascribed to the properties of Si. Figure S5 shows the Coulombic efficiency of the composite electrode.…”