Regulation of oxygen vacancies in nitrogen-doped Ga₂O₃ films for high-performance MSM solar-blind UV photodetectors

Abstract

Gallium oxide (Ga2O3)-based solar-blind photodetectors (SBPDs) have shown promising applications. However, the concentration of native oxygen vacancy (VO) impacts the photoelectrical performance of the Ga2O3 film. Herein, a nitrogen-doping method...

High-Performance Solar-Blind Photodetector Based on (010)-Plane β-Ga2O3 Thermally Oxidized from Nonpolar (110)-Plane GaN

“…To be specific, a dark current as low as 6.30 × 10 –12 A and a relatively high photocurrent of 1.86 × 10 –5 A were achieved at a bias voltage of 5 V. As a comparison, the dark current and photocurrent of the comparison SBPD fabricated on the basis of sample T C6 under the same conditions were 4.02 × 10 –7 and 3.63 × 10 –10 A, respectively, as shown in Figure S5 of the Supporting Information. Such a low I dark is not only due to the back-to-back Schottky barrier but also attributed to the single-crystal tendency and good uniformity, especially the relatively high crystalline quality of the (010)-plane β-Ga 2 O 3 film.…”

“…To comprehensively evaluate the photodetection performance of the PD, most figures of merits for a PD, such as photo-to-dark current ratio (PDCR), responsivity ( R ), specific detectivity ( D ), and external quantum efficiency (EQE), were calculated as a function of bias voltage and were plotted in Figure b. These parameters are defined as follows: − PDCR = I photo − I dark I dark R = I photo − I dark P λ S EQE = h c q λ R × 100 % D = R S 2 e I dark where I photo and I dark represent the photocurrent and dark current, respectively, P λ is the light power density, S is the effective irradiation area of PD, h is Planck’s constant, c is the speed of light, q is the elementary charge, and λ is the wavelength of UV light. These parameters at 5 V for the SBPDs fabricated in this work and the previously reported results are summarized in Table .…”

“…Summary of Fast and Slow Relaxation Time Constants of SBPDs in Recent Reports23,42,47,[50][51][52][53] …”

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga2O3/Ag

“…10,11 Ga 2 O 3 -based deep UV detectors are commonly fabricated using metal-semiconductor-metal (MSM) structure, heterojunction, and Schottky junction. 12–16 MSM and Schottky junction devices typically possess easier fabrication procedures with considerable high gains. Additionally, asymmetric Schottky barrier structures can achieve a reduced dark current, higher responsivity and faster response time than MSM symmetric barrier structures.…”