An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga<sub>2</sub>O<sub>3</sub>/Ag

Song, Qi; Liu, Jiahang; Yue, Jianying; Ji, Xueqiang; Shen, Jiaying; Yi, Yang; Wang, Jinjin; Li, Shan; Wu, Zhenping; Tang, Weihua

doi:10.1039/d3tc01456h

Cited by 8 publications

(3 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…More importantly, a monolayer graphene film exhibits about 95% transmittance in the solar-blind region [86,87], indicating a good matching with the solar-blind PD. Qi et al reported an enhanced ultrasensitive β-Ga 2 O 3 SBPD with a graphene electrode [88]. This SBPD was fabricated based on asymmetric Schottky junction of graphene/Ga 2 O 3 /Ag as shown in figure 17(a).…”

Section: Graphene-semiconductor Junctionmentioning

confidence: 99%

Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application

Chen,

Li,

Zhang

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Due to the excellent responsivity and high rejection ratio, Ga2O3-based solar-blind ultraviolet photodetectors are attracting more and more attention. The excellent material quality ensures great performance of photodetectors. In this review, we summarize recent advancements in growth methods of β-Ga2O3 bulk and thin films. Based on high-quality substrates and thin films, numerous state-of-art Ga2O3-based photodetectors have been reported in decades. Therefore, we collect some representative achievements in Ga2O3-based photodetectors, summarizing the development process of each type of structure. Furthermore, the advantages and disadvantages of different structures are also discussed to provide practical reference for researchers in this field. Additionally, inspired by the excellent performance of Ga2O3-based photodetectors, many research teams have also explored the applications based on solar-blind detection. We summarize three application fields, including imaging, light communication, and optical tracing, introducing some excellent works from different teams. Finally, we evaluate the outlook and remaining challenges in the future development of Ga2O3-based photodetectors.

show abstract

Section: Graphene-semiconductor Junctionmentioning

confidence: 99%

Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application

Chen,

Li,

Zhang

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…UV photodetector with graphene/pentacene single crystal heterostructure exhibited a responsivity of 10 5 AW −1 and a response of 6 µs [35]. Graphene/MoS 2 and graphene/β-Ga 2 O 3 /Ag were utilized to enhance the responsivity of GPDs [36,37]. Although numerous efforts have been devoted to enhancing the responsivity and response speed of GPDs, little attention has been paid to the long term stability.…”

Section: Introductionmentioning

confidence: 99%

A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability

Huang,

Zhu,

Cheng

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Long term stability, high responsivity, and fast response speed are essential for the commercialization of graphene photodetectors (GPDs). In this work, a parylene/graphene UV photodetector with long term stability, ultrahigh responsivity and fast response speed, is demonstrated. Parylene as a stable physical and chemical insulating layer reduces the environmental sensitivity of graphene, and enhances the performances of GPDs. In addition, utilizing bilayer electrodes reduces the buckling and damage of graphene after transferring. Parylene/graphene UV photodetector exhibits an ultrahigh responsivity of 5.82×10^5 A/W under 325 nm light irradiation at 1 V bias. Additionally, it shows a fast response speed of 17 μs, and a long term stability at 405 nm wavelength which is absent in the device without parylene. Parylene/graphene UV photodetector possesses superior performances. This paves the way to realize the commercial application of high-performance graphene hybrid photodetectors, and provides a practical method for maintaining the long term stability of two dimensional (2D) materials.

show abstract

“…19 Several heterojunctions (such as NiO/ZnO, TiO 2 /Co 3 O 4 , and TiO 2 /NiO) were designed by numerous methods to improve the performance of TPV devices. 12,14,15,20–23…”

Section: Introductionmentioning

confidence: 99%

A study of the optical properties of wide bandgap oxides for a transparent photovoltaics platform

Patel,

Ghosh,

Park

et al. 2023

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga₂O₃/Ag

Abstract: The device has a dark current of 12.09 pA and achieves an outstanding responsivity of 44.09 A W−1, a high detectivity of 5.84 × 1012 Jones.

Cited by 8 publications

References 57 publications

Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application

Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application

A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability

A study of the optical properties of wide bandgap oxides for a transparent photovoltaics platform

Contact Info

Product

Resources

About

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga2O3/Ag

Abstract: The device has a dark current of 12.09 pA and achieves an outstanding responsivity of 44.09 A W−1, a high detectivity of 5.84 × 1012 Jones.

Cited by 8 publications

References 57 publications

Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application

Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application

A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability

A study of the optical properties of wide bandgap oxides for a transparent photovoltaics platform

Contact Info

Product

Resources

About

An enhanced ultrasensitive solar-blind UV photodetector based on an asymmetric Schottky junction designed with graphene/β-Ga₂O₃/Ag

Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application

Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application