Abstract:In this paper an experimental study of the scalability of a gate/N- overlapped lightly doped drain (OL-LDD) structure in the deep-submicrometer regime is presented. Devices were optimized for processes with a design rule down to 0.15 µm. The allowable power
supply voltage is obtained by investigating the time-dependent dielectric breakdown reliability, the minimum operating voltage, the gate-induced-drain-leakage current, the drain-induced-barrier-lowering effect and the DC hot carrier reliability. It was … Show more
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