SAW resonators using epitaxially grown Al electrodes

Ieki, Hideharu; Sakurai, Atsushi

doi:10.1002/ecjc.4430761004

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…4,5 To improve the power durability of Al films, alloys of Al 6-8 and epitaxial Al films were employed. [9][10][11][12][13] The preparation of these films, however, requires normally complicated techniques and costly equipments. For this reason, textured Al films have attracted much attention, since they have revealed greater resistance to stress migration and have higher power durability.…”

Section: Introductionmentioning

confidence: 99%

Ion bombardment-induced high orientation of Al/Ti films for surface acoustic wave device applications

Pan

Niu

et al. 2005

Journal of Elec Materi

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Al/Ti films were deposited on 128°Y-X LiNbO 3 substrates by electron-beam (e-beam) deposition. Low-energy Ar ion beam bombardment was employed during the Ti underlayer deposition. Influence of low-energy beam bombardment on the texture of Al/Ti films was investigated by x-ray diffraction (XRD) analysis. It was found that Al films deposited on Ar-ion bombarded Ti underlayers possessed excellent (111) texture. With the textured Al/Ti films, a 2.3-GHz range image-impedance connection surface acoustic wave (SAW) filter was successfully fabricated.

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Section: Introductionmentioning

confidence: 99%

Ion bombardment-induced high orientation of Al/Ti films for surface acoustic wave device applications

Pan

Niu

et al. 2005

Journal of Elec Materi

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“…This deterioration is observed as grain boundary diffusion of Al atoms, involving hillocks and voids. Various solutions to this problem have been studied so far [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], including providing electrodes with mechanical strength to withstand repetitive stress, and reducing grain boundary diffusion by methods such as blocking diffusion pathways, or ! using diffusion-resistant (crystal) structures.…”

Section: Introductionmentioning

confidence: 99%

Power durability dependence on temperature, input power, and structure of electrodes in SAW filters

Takayama

Nakanishi

2012

Elect Comm in Japan

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The dependence of power durability on temperature and input power has been studied in detail by using SAW filters with AlMgCu/Ti/AlMgCu/Ti four-layered electrodes. In SAW filters, acceleration factors of degradation are temperature and input power. These two factors are not independent in actual SAW filters, but it is necessary to control the conditions to keep the independence of these two factors in accelerated deterioration tests. As the results of power durability estimation of four-layered electrodes taking account of the above point, the activation energy of diffusion showed the value of the bulk diffusion level in tests using 800-MHz-band filters, and the dependence of the input power increased in proportion to the frequency of the input power. We also successfully improved the power durability of four-layered electrodes by modifying the layered structure and increasing the Mg content of the AlMgCu alloy layers. In the former case, the dependence on input power did not change but the absolute level versus the input power was improved. In the latter case the dependence on input power and the absolute level versus the input power did not change but the dependence on temperature increased. © 2012 Wiley Periodicals, Inc. Electron Comm Jpn, 95(4): 33-40, 2012; Published online in Wiley Online Library (wileyonlinelibrary.com).

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“…We developed a method to improve resistance of the SAW devices to stress-migration using epitaxially grown Al films as electrodes [4,5,6]. Epitaxially grown A I electrodes have high resistance to stressmigration of SAW and we have already started mass production of SAW resonators using epitaxially grown Al electrodes on rotated Y-cut quartz substrates , which are formed by vapor deposition.…”

Section: Introductionmentioning

confidence: 99%

Epitaxially grown aluminum film for high-power surface acoustic wave devices

Sakurai

Nakanishi²,

Yoshino³

et al.

Proceedings of 1995 Japan International Electronic Manufacturing Technology Symposium

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It is significant for surface acoustic wave (SAW) devices to improve resistance to stressmigration of aluminum (Al) electrodes. Epitaxially grown Al film was very useful for electrodes of SAW devices because of its resistance to stress-migration. Epitaxially grown Al film was formed on 36O-rotated Y-cut lithium tantalate (LiTaOs) substrate by the dual-ion-beam sputtering (DIBS) with ion assisting of 500 eV energy. The epitaxial relationship was as follows;(1 1 1)[ 10 l]Al//(O12)[ 1001 LiTa03. SAW filters using epitaxially grown Al electrodes made it possible to improve the time to failure (TF) caused by stress-migiation over 100 times as long as those of SAW filters using conventional polycrystalline aluminum-copper (Al-Cu) electrodes.

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SAW resonators using epitaxially grown Al electrodes

Cited by 6 publications

References 8 publications

Ion bombardment-induced high orientation of Al/Ti films for surface acoustic wave device applications

Ion bombardment-induced high orientation of Al/Ti films for surface acoustic wave device applications

Power durability dependence on temperature, input power, and structure of electrodes in SAW filters

Epitaxially grown aluminum film for high-power surface acoustic wave devices

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