Al/Ti films were deposited on 128°Y-X LiNbO 3 substrates by electron-beam (e-beam) deposition. Low-energy Ar ion beam bombardment was employed during the Ti underlayer deposition. Influence of low-energy beam bombardment on the texture of Al/Ti films was investigated by x-ray diffraction (XRD) analysis. It was found that Al films deposited on Ar-ion bombarded Ti underlayers possessed excellent (111) texture. With the textured Al/Ti films, a 2.3-GHz range image-impedance connection surface acoustic wave (SAW) filter was successfully fabricated.
To obtain both high power durability and fine-dimensional control in high-frequency surface acoustic wave devices, a highly oriented (111) texture was developed in electronic beam evaporated Al films on Zr underlayer. In this paper, the effects of Zr underlayer on the microstructure and resistivity of Al/Zr/LiNbO3 films were investigated. The films show an extremely smooth surface. The optimum annealing temperature is 200 °C to obtain low resistivity. For Al films with Zr underlayer, reactive ion etching with gases containing BCl3 can be more easily performed than that for Al films with Cu underlayer.
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