Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs

Chen, P.F.; Hsin, Yue-Ming; Asbeck, P.M.

doi:10.1109/iscs.1998.711689

Cited by 6 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To achieve highefficiency it is necessary to minimize charge storage during transistor saturation (in the ON state). This can be achieved using double-heterojunction bipolar transistors (DHBT's) with wide bandgap collectors such as those reported in [6]. Fig.…”

Section: Amplifier Configurationmentioning

confidence: 99%

Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators

Jayaraman

Chen

Hanington

et al. 1998

IEEE Microw. Guid. Wave Lett.

Self Cite

108

View full text Add to dashboard Cite

A novel amplifier configuration is described, in which a bandpass delta-sigma modulator is used to produce a two-level (digital) signal representing an analog radio frequency (RF) input. Subsequently, a switching-mode amplifier and bandpass filter are used to amplify the signal and remove unwanted spectral components. This configuration has the potential of achieving high efficiency (typical of switching mode amplifiers) together with high linearity. A simulated implementation with GaAs heterojunction bipolar transistors (HBT) is shown.

show abstract

Section: Amplifier Configurationmentioning

confidence: 99%

Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators

Jayaraman

Chen

Hanington

et al. 1998

IEEE Microw. Guid. Wave Lett.

Self Cite

108

View full text Add to dashboard Cite

show abstract

“…These disadvantages can be improved by replacing the InGaAs collector with an InP layer [8]. However, the electron blocking effect resulting from the conduction band discontinuity ( E C ) at a base-collector (BC) heterojunction will lead to detrimental 0268-1242/04/070864+06$30.00 © 2004 IOP Publishing Ltd Printed in the UK influences such as reduced current gain, increased saturation voltage and extra charge storage [8,9]. In this work, the InP/InGaAs single-and double-heterojunction bipolar transistors, denoted as SHBT and DHBT, respectively, with an InP tunnelling barrier between the InGaAs emitter and base, similar to the TEBT structure mentioned above, are fabricated and demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

Chen

Cheng

Chiou

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The DC performances of InP/InGaAs single and double heterojunction bipolar transistors (SHBT and DHBT) are compared and studied. The temperature-dependent characteristics of both devices are also presented. Due to the use of a 4000Å InP collector, the studied DHBT exhibits a higher breakdown voltage than the SHBT. The common-emitter breakdown voltages of the studied SHBT and DHBT are higher than 2 and 10 V, respectively. In addition, based on the employment of a tunnelling emitter barrier, the emitter injection efficiency is improved substantially, so a very low offset voltage (<50 mV) is obtained for the studied SHBT device. Furthermore, the common-emitter DC current gain of the studied SHBT is relatively independent of the temperature at low and middle current regimes. On the other hand, the studied DHBT has a smaller current gain due to the collector current blocking effect described.

show abstract

Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Chen

Hsin

Welty

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs

Cited by 6 publications

References 4 publications

Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators

Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators

Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure

Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Contact Info

Product

Resources

About