Safe-Operating-Area of Snubberless Series Connected Silicon and SiC power devices

Davletzhanova, Zarina; Dai, Tianxiang; Alatise, Olayiwola; Gonzalez, Jose Ortiz; Mawby, P.A.; Bonyadi, Roozbeh; Chan, C.W.

doi:10.1109/ecce.2018.8557402

Cited by 2 publications

(1 citation statement)

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“…The secondary mechanism can be due to the limitation of the material, such as reaching intrinsic temperature, or due to a significant leakage through the gate dielectric. It can also occur when the parasitic bipolar junction transistor (BJT) latches [2]- [7]. Furthermore, in Si IGBTs, it has been demonstrated that filamentation may occur, where the filament will be pinned to field crowding areas of the parasitic BJTs [8].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions

Nida

Kakarla

Ziemann

et al. 2021

IEEE Trans. Electron Devices

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The phenomenon of reduced energy capability of power metal-oxide-semiconductor fieldeffect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV 4H-SiC MOSFETs. Unclamped inductive switching (UIS) measurements as well as electrical transport simulations are used to identify the current paths and maximum avalanche currents, providing insight into the design limits. The investigated devices show a reduced energy capability for avalanche current above 52 A due to the latching of the parasitic bipolar junction transistor (BJT). The BJT also limits the maximum switchable current to ≤102 A. Based on the measurements and simulations, a procedure utilizing UIS measurements for identification of design limits is presented.

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Section: Introductionmentioning

confidence: 99%