“…In addition, for the read operations, no sensing voltage is required to read the V OUT because the logic states of the NAND LIM are stored as V OUT . The NAND and NOR LIMs are compared in Table 1 with existing charge- or resistance-based memory technologies reported by other research groups in terms of the read/write time, voltage, LIM computation energy/latency, leakage power, and retention 10 – 14 . Figure 2 LIM operations.…”
Section: Resultsmentioning
confidence: 99%
“…Resistance-based memory includes resistive RAM (RRAM), spin-transfer torque magnetoresistive RAM (STT-MRAM), and phase-change memory (PCM). The read/write time, voltage, LIM computation energy/latency, leakage power, and retention for existing charge-or resistance-based memory, as reported in other studies, are listed in Table 1 10 – 14 . In charge-based memory, although SRAM is very fast (~ 1 ns) and DRAM has high density, they contain volatile memory devices, and hence have high energy needs.…”
The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowire feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.
“…In addition, for the read operations, no sensing voltage is required to read the V OUT because the logic states of the NAND LIM are stored as V OUT . The NAND and NOR LIMs are compared in Table 1 with existing charge- or resistance-based memory technologies reported by other research groups in terms of the read/write time, voltage, LIM computation energy/latency, leakage power, and retention 10 – 14 . Figure 2 LIM operations.…”
Section: Resultsmentioning
confidence: 99%
“…Resistance-based memory includes resistive RAM (RRAM), spin-transfer torque magnetoresistive RAM (STT-MRAM), and phase-change memory (PCM). The read/write time, voltage, LIM computation energy/latency, leakage power, and retention for existing charge-or resistance-based memory, as reported in other studies, are listed in Table 1 10 – 14 . In charge-based memory, although SRAM is very fast (~ 1 ns) and DRAM has high density, they contain volatile memory devices, and hence have high energy needs.…”
The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowire feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.
“…In addition, for the read operations, no sensing voltage is required to read the V OUT because the logic states of the NAND LIM are stored as V OUT . The NAND and NOR LIMs are compared in Table 1 with existing charge-or resistance-based memory technologies reported by other research groups in terms of the read/write time, voltage, LIM computation energy/latency, leakage power, and retention [10][11][12][13][14] .…”
Section: Nand and Nor Lim Operation Under Dynamic Conditionsmentioning
confidence: 99%
“…Resistance-based memory includes resistive RAM (RRAM), spin-transfer torque magnetoresistive RAM (STT-MRAM), and phase-change memory (PCM). The read/write time, voltage, LIM computation energy/latency, leakage power, and retention for existing charge-or resistance-based memory, as reported in other studies, are listed in Table 1 [10][11][12][13][14] . In charge-based memory, although SRAM is very fast (~1 ns) and DRAM has high density, they contain volatile memory devices, and hence have high energy needs.…”
The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.
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