Room-Temperature Single-Photon Detection With 1.5-GHz Gated InGaAs/InP Avalanche Photodiode

Liang, Yan; Chen, Yuanjin; Huang, Zinan; Bai, Guomin; Yu, Min‐Wen; Zeng, Heping

doi:10.1109/lpt.2016.2630273

Cited by 15 publications

(14 citation statements)

References 21 publications

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“…A. Trap-Assisted Tunneling 1) Intrinsic carrier concentration: We calculate the intrinsic carrier concentration n i (T ) in silicon via [36]: n i (T ) = 5.29 × 10 19 · (T /300) 2.54 · exp(−6726/T ) (8) 2) Effective Recombination Lifetime: The effective recombination lifetime τ r (T ) was measured to be 7 ns at room temperature for an undoped Si rib waveguide device with similar sub-µm dimensions [37]. To obtain a suitable value at 243 K, we analyze the temperature dependence of τ r (T ): for lowlevel injection in p-type silicon, τ r (T ) can be approximated as the electron recombination lifetime [32], i.e.…”

Section: Appendixmentioning

confidence: 99%

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Yanikgonul

Leong

Ong

et al. 2020

IEEE J. Select. Topics Quantum Electron.

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Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated quantum photonics demonstrations still require the coupling of light to external photodetectors. On-chip silicon single-photon avalanche diodes (SPADs) provide a viable solution as they can be seamlessly integrated with photonic components, and operated with high efficiencies and low dark counts at temperatures achievable with thermoelectric cooling. Moreover, they are useful in applications such as LIDAR and low-light imaging. In this paper, we report the design and simulation of silicon waveguide-based SPADs on a silicon-on-insulator platform for visible wavelengths, focusing on two device families with different doping configurations: p-n + and p-i-n + . We calculate the photon detection efficiency (PDE) and timing jitter at an input wavelength of 640 nm by simulating the avalanche process using a 2D Monte Carlo method, as well as the dark count rate (DCR) at 243 K and 300 K. For our simulated parameters, the optimal p-i-n + SPADs show the best device performance, with a saturated PDE of 52.4 ± 0.6% at a reverse bias voltage of 31.5 V, full-width-half-max (FWHM) timing jitter of 10 ps, and a DCR of < 5 counts per second at 243 K.

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Section: Appendixmentioning

confidence: 99%

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Yanikgonul

Leong

Ong

et al. 2020

IEEE J. Select. Topics Quantum Electron.

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“…InGaAs/InP SPAD is reverse biased with the DC bias voltage V b1 (or V b2 if we set InGaAs/InP SPAD to off-state) and AC bias voltage V g from the cathode side. We can set gate amplitude to V g ∈ [1,7] V (right bound depends on the circuit realization features and can vary from 5 − 9 V). The AC bias voltage (gates) is a 312.5 MHz frequency sine electrical wave.…”

Section: Influence Of the Gating Parametersmentioning

confidence: 99%

“…SPD's structure is not universal, it's designed for a specific application and operating parameters and is based on various physical principals. There are several kinds of devices that can be used as a single photon sensor, for example, avalanche photodiode (APD) [7], single photon avalanche diode (SPAD) [8], negative feedback avalanche diode (NFAD) [9], semiconductor matrices [10], superconducting nanowires [11].…”

Section: Introductionmentioning

confidence: 99%

Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

et al. 2022

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In this paper, we investigated a self-developed sine wave gated single-photon detector (SPD) for 1550 nm wavelength primary for quantum key distribution (QKD) usage. We studied the influence of DC bias voltage and AC gate amplitude on the SPD's functional parameters and presented a simple and effective algorithm for its optimization. Such optimization showed practical benefits while SPD was set up on the QKD device. We admitted that the dark count rate decreases with an increase in gating voltage with fixed photon detection efficiency. We observed the charge persistence effect in sine-gated SPDs, which previously had been observed only at square-pulses gated SPDs, and showed that this effect is limiting for infinity increasing gate amplitude.

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“…A single photon that is incident on a SPAD can trigger a macroscopic avalanche current via a cascade of impact ionizations, and the resultant avalanche current is used for detection. In contrast to SNSPDs, SPADs typically only require thermoelectric cooling and can operate even at room temperature [102][103][104]. Moreover, SPADs can be easily incorporated into silicon photonics platforms and benefit from mature CMOS fabrication technologies [105][106][107], making them a promising candidate for scalable manufacturing.…”

Section: Part-1: Integrated Single Photon Detection At Visible Wavelengthsmentioning

confidence: 99%

“…Single-photon avalanche diodes (SPADs) are a type of solid-state single-photon detectors based in a reverse biased diode structure. SPADs typically only require thermoelectric cooling and can even operate at room temperature [102,104]; this offers many practical advantages in system implementation. Figure 2.3 depicts the avalanche multiplication process in SPADs.…”

Section: Single-photon Avalanche Diodesmentioning

confidence: 99%

Single photon detection and manipulation in photonic integrated circuits

Yanikgonul¹

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I have reviewed the content and presentation style of this thesis and declare it is free of plagiarism and of sufficient grammatical clarity to be examined. To the best of my knowledge, the research and writing are those of the candidate except as acknowledged in the Author Attribution Statement. I confirm that the investigations were conducted in accord with the ethics policies and integrity standards of Nanyang Technological University and that the research data are presented honestly and without prejudice.

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Room-Temperature Single-Photon Detection With 1.5-GHz Gated InGaAs/InP Avalanche Photodiode

Cited by 15 publications

References 21 publications

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

Single photon detection and manipulation in photonic integrated circuits

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