We demonstrate room temperature heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide produced a large four-wave-mixing nonlinearity coefficient gamma_eff =4100 W-1 m-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g(2)(0)=0.19 +/- 0.03. The demonstration of a single photon source within a
silicon platform holds promise for future integrated quantum photonic circuits
Anderson localization of light has been demonstrated in a few different dielectric materials and lithographically fabricated structures. However, such localization is difficult to control, and requires strong magnetic fields or nonlinear optical effects, and electronic control has not been demonstrated. Here, we show control of optical Anderson localization using charge carriers injected into more than 100 submicrometre-scale p-n diodes. The diodes are embedded into the cross-section of the optical waveguide and are fabricated with a technology compatible with the current electronics industry. Large variations in the output signal, exceeding a factor of 100, were measured with 1 V and a control current of 1 mA. The transverse footprint of our device is only 0.125 µm(2), about five orders of magnitude smaller than optical two-dimensional lattices. Whereas all-electronic localization has a narrow usable bandwidth, electronically controlled optical localization can access more than a gigahertz of bandwidth and creates new possibilities for controlling localization at radiofrequencies, which can benefit applications such as random lasers, optical limiters, imagers, quantum optics and measurement devices.
Using two-photon (Franson) interferometry, we measure the entanglement of photon pairs generated from an optically-pumped silicon photonic device consisting of a few coupled microring resonators. The pair-source chip operates at room temperature, and the InGaAs single-photon avalanche detectors (SPADs) are thermo-electrically cooled to 234K. Such a device can be integrated with other components for practical entangled photon-pair generation at telecommunications wavelengths.
Integrated optical devices may replace bulk crystal or fiber based assemblies with a more compact and controllable photon pair and heralded single photon source and generate quantum light at telecommunications wavelengths. Here, we propose that a periodic waveguide consisting of a sequence of optical resonators can outperform conventional waveguides or single resonators and generate more than 1 Giga-pairs per second from a sub-millimeter-long room-temperature silicon device, pumped with only about 10 milliwatts of optical power. Furthermore, the spectral properties of such devices provide novel opportunities for chip-scale quantum light sources.
Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.
We fabricate a two-stage wavelength converter in silicon by cascading a microring wavelength mixer with a five-ring coupled-resonator filter. A p-i-n diode is incorporated into the microring for electronic carrier sweep-out, and microheaters are incorporated into the filter for tunability. The generated idler wavelength is effectively separated from the input pump and signal, with nearly 50 dB of suppression.
We demonstrate four-wave mixing in silicon-on-insulator coupled-resonator optical waveguides consisting of 35 and 65 microring resonators, using a cw pump with coupled power below 20 mW and observed parametric conversion across more than 10 THz. The conversion efficiency is enhanced by +16 dB relative to a silicon straight waveguide of equivalent length, due to the slowing factor of the coupled-resonator structure.
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