Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

Abstract

We report photopumped room-temperature surface-mode lasing at 401 nm in a InGaAlN vertical-cavity surface-emitting laser grown on a sapphire substrate using metal–organic vapor-phase epitaxy. A 2λ cavity was formed by a quarter-wave Al0.15Ga0.85N/GaN distributed Bragg reflector on the one side of the active layer and a GaN–air interface on the other. A multilayer structure composed of 12-fold-stacked ultrathin InGaN insertions in a GaN matrix served as an active layer providing ultrahigh material gain and making possible vertical lasing without use of the upper Bragg reflector.

Optically Pumped Quasi-Continuous Wave Violet Vertical Cavity Surface Emitting Lasers

“…[2] and [3], we estimate that the threshold conditions in Fig. 2 are orders of magnitude lower than we can surmise from those reports.…”

“…Recently, two groups have reported vertical cavity, or ªsurface lasingº in structures that incorporate AlGaN-based DBR mirrors, under pulsed, low duty cycle ( 10 Hz) intense optical pumping [2,3]. We wish to underscore that observations such as those in Fig.…”

Growth and Characterization of Thick Si-Doped AlGaN Epilayers on Sapphire Substrates

“…High crystal perfection of the epilayers allowed us to use them as buffers for strain-compensated AlGaN/ GaN distributed Bragg reflectors with high reflectivity [2] served as bottom mirror for photopumped RT operated InGaN/GaN/AlGaN VCSELs [3]. …”

Crack‐free AlGaN/GaN Bragg mirrors grown on Si (111) substrates by metalorganic vapor phase epitaxy

“…In addition, the high absorption coefficient of silicon degrades the performance of LED grown on it. Although the high-reflectivity AlN / GaN (99%) distributed Bragg reflectors (DBRs) can resolve this problem [3], large mismatch between AlN and GaN (~2.5%) along with the tensile stress from silicon substrate make it much more difficult to grow desired DBRs over silicon [4]. We use a set of nine period AlN / GaN short-period superlattices (SL) with average Al content of 50% instead of the bulk Al 0.5 Ga 0.5 N.…”