A 1 W continuous-wave laser operation via the ground state of vertically coupled InGaAs quantum dots (VCQDs) in an AlGaAs matrix is demonstrated. VCQDs are directly revealed in transmission electron microscopy images of the laser structure. Ninety-six percent internal quantum efficiency is realized. The laser gain maximum shifts significantly with drive current towards higher photon energies in agreement with the relatively broad size distribution of VCQDs.

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The authors report on the observation and study of terahertz radiation emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field. The experimental results are compared with the theoretical model of blackbody-like emission from hot two-dimensional electrons. Complementary transport measurements and a theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of nonequilibrium optical phonon accumulation is discussed.

Low threshold current density (AlInGa)As/GaAs lasers based on InGaAs quantum dots (QDs) are grown by metal organic chemical vapour deposition (MOCVD). Quantum dots deposited at 490° C and covered with GaAs are directly revealed in the active region. On a transmission electron microscopy (TEM) image of the laser structure no large clusters or dislocations are found over a macroscopic distance. We show that the properties of QD lasers can be strongly improved if the QDs are confined by Al0.3Ga0.7As barriers and the cladding layers are grown at high temperature. Optimisation of the laser structure geometry allows extension of the range of ultrahigh temperature stability (T 0=385 K) of the threshold current to 50° C.