High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Maximov, M. V.; Shernyakov, Yu. M.; Tsatsulnikov, A. F.; Lunev, A. V.; Сахаров, А. В.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Kop’ev, P. S.; Asryan, Levon V.; Alfërov, Zh. I.; Ledentsov, N. N.; Bimberg, D.; Kosogov, A. O.; Werner, P.

doi:10.1063/1.367390

Cited by 86 publications

(22 citation statements)

References 5 publications

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“…High temperature stability of threshold current in a QD laser is demonstrated [19] in agreement with the theoretical predictions, and theoretical understanding of the QD laser has been achived [20,21]. Competitive edge- [22][23][24] and surface-emitting [25] lasers are created.…”

Section: Light Emitterssupporting

confidence: 49%

Quantum dots: Paradigm changes in semiconductor physics

Bimberg

1999

Semiconductors

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(Получена 1 марта 1999 г. Принята к печати 2 марта 1999 г.)Deposition of one to a few monolayers of a semiconductor having a lattice constant largely different from the underlying substrate leads to formation of coherent "quantum dot arrays" of densities beyond 10 11 cm −2 in a matter of seconds. Self-organisation effects govern their massively parallel formation. Fundamental paradigms of semiconductor physics have to be changed in describing such quantum dots or their ensembles.

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Section: Light Emitterssupporting

confidence: 49%

Quantum dots: Paradigm changes in semiconductor physics

Bimberg

1999

Semiconductors

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“…The vertical alignment of the QD's was identified in TEM investigations. 15. The samples were mounted in a closedcycle cryostat at a temperature varied between 10 and 300 K. The PL was excited by a He-Ne laser, and detected spectrally resolved by a monochromator and a cooled Ge detector.…”

Section: Methodsmentioning

confidence: 99%

Optical anisotropy in vertically coupled quantum dots

Langbein

Leósson

et al. 1999

Phys. Rev. B

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We have studied the polarization of surface and edge-emitted photoluminescence ͑PL͒ from structures with vertically coupled In 0.5 Ga 0.5 As/GaAs quantum dots ͑QD's͒ grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QD's forming after the growth of many layers by lateral coalescence of QD's in the upper layers. While in the single, 3-and 10-layer stacks, both TE polarized PL components are stronger than the TM component, the ͓110͔ TE component is weaker than the TM component in the 20-layer stack. This polarization reversal is attributed to an increasing vertical coupling with increasing layer number due to increasing dot size.

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“…1 The radiative lifetime of the excitons in QDs at room temperature is one of the most important device parameters, being inversely proportional to the modal gain of QD lasers. [2][3][4][5] The radiative lifetime of strongly confined excitons in QDs, where the energy separation between the ground state and the first excited exciton state is larger than the thermal energy k B T ͑k B is the Boltzmann constant and T is the temperature͒, should be almost independent of T. However, in real QDs, the radiative lifetime of the ground state excitons is expected to increase with increasing temperature due to the thermal population of optically inactive or poorly active exciton states. [6][7][8] This phenomenon was first observed in InGaAs/GaAs QDs by Wang et al 9 in 1994, in InAs/GaAs QDs by Yu et al 10 in 1996, and by other groups later.…”

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Long luminescence lifetime in self-assembled InGaAs/GaAs quantum dots at room temperature

Zhang

Hvam

2008

Applied Physics Letters

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Time-resolved photoluminescence (PL) measurements of high-quality self-assembled small In0.5Ga0.5As/GaAs quantum dots (QDs) show that the PL decay time of the QD ground state transition is nearly constant when the temperature is below 80 K and increases monotonously from 1.0 to 5.5 ns when the temperature increases from 80 to 300 K. The increased radiative lifetime of the QD ground state at higher temperatures is attributed to the thermal population of the subwetting-layer continuum states and could be one of the fundamental reasons for the low modal gain of the QD ground state transition in single-layer self-assembled QD lasers.

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High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Cited by 86 publications

References 5 publications

Quantum dots: Paradigm changes in semiconductor physics

Quantum dots: Paradigm changes in semiconductor physics

Optical anisotropy in vertically coupled quantum dots

Long luminescence lifetime in self-assembled InGaAs/GaAs quantum dots at room temperature

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