Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

Shmidt, N. M.; Davydov, D.V.; Емцев, В. В.; Krestnikov, I. L.; Lebedev, Alexander A.; Lundin, W. V.; Полоскин, Д.С.; Сахаров, А. В.; Usikov, A. S.; Osinsky, A.

doi:10.1002/(sici)1521-3951(199911)216:1<533::aid-pssb533>3.0.co;2-s

Cited by 40 publications

(22 citation statements)

References 4 publications

(5 reference statements)

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“…It includes studies based on c and electron irradiation, since the nature of irradiation induced defects is quite similar in both the cases. 6 6 It is only in the articles from Ioffe Institute, Russia, 9,20,21 where a rise in the carrier concentration with c-irradiation is reported for heavily doped GaN samples. It is also reported by them that the electron concentration decreases after c-irradiation for slightly doped epilayers, while it increases for heavily doped GaN epilayers.…”

Section: A Irradiation Effect On the Gan Epitaxial Layermentioning

confidence: 53%

“…It is also reported by them that the electron concentration decreases after c-irradiation for slightly doped epilayers, while it increases for heavily doped GaN epilayers. 9 However, no reason for the same is given by the respective authors. Nevertheless, it gives enough indications that the nature of the temperature dependent carrier concentration profile of c-irradiated GaN samples is somehow associated with the donor concentration of the GaN sample.…”

Section: A Irradiation Effect On the Gan Epitaxial Layermentioning

confidence: 99%

“…8 Since the probability of cluster formation is enhanced by the presence of native defects in the material, the effect of irradiation induced defects on the electrical transport properties critically depends on the background carrier concentration. 9 Although a large amount of literature is available on the effect of irradiation on moderately doped GaN, a systematic study on the electronic transport in heavily doped n-type GaN is missing. Only one group has reported that the effect of Gamma (c) radiation induced defects in GaN varies as a function of carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

“…However, no efforts were made by them to understand the origin of defects. 9 In a previous article, we have shown that the carrier transport in n þ -GaN epilayers can be significantly influenced by the presence of charge dislocations that are generally present at the GaN/Sapphire interface. 10 Therefore, the impact of irradiation induced defects on electrical transport is not a trivial matter since interfacial transport of carriers might dominate over the thermally activated bulk transport in specific cases.…”

Section: Introductionmentioning

confidence: 99%

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Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Chatterjee

Khamari

Porwal

et al. 2018

Journal of Applied Physics

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GaN Schottky photodetectors are fabricated on heavily doped n-type GaN epitaxial layers grown by the hydride vapour phase epitaxy technique. The effect of 60Co γ-radiation on the electronic transport in GaN epilayers and Schottky detectors is studied. In contrast to earlier observations, a steady rise in the carrier concentration with increasing irradiation dose is clearly seen. By considering a two layer model, the contribution of interfacial dislocations in carrier transport is isolated from that of the bulk layer for both the pristine and irradiated samples. The bulk carrier concentration is fitted by using the charge balance equation which indicates that no new electrically active defects are generated by γ-radiation even at 500 kGy dose. The irradiation induced rise in the bulk carrier concentration is attributed to the activation of native Si impurities that are already present in an electrically inert form in the pristine sample. Further, the rise in interfacial contribution in the carrier concentration is governed by the enhanced rate of formation of nitrogen vacancies by irradiation, which leads to a larger diffusion of oxygen impurities. A large value of the characteristic tunnelling energy for both the pristine and irradiated Au/Ni/GaN Schottky devices confirms that the dislocation-assisted tunnelling dominates the low temperature current transport even after irradiation. The advantage of higher displacement energy and larger bandgap of GaN as compared to GaAs is evident from the change in leakage current after irradiation. Further, a fast recovery of the photoresponse of GaN photodetectors after irradiation signifies their compatibility to operate in high radiation zones. The results presented here are found to be crucial in understanding the interaction of 60Co γ-irradiation with n+-GaN epilayers.

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Section: A Irradiation Effect On the Gan Epitaxial Layermentioning

confidence: 53%

Section: A Irradiation Effect On the Gan Epitaxial Layermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Chatterjee

Khamari

Porwal

et al. 2018

Journal of Applied Physics

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“…In GaN, two common defect-related traps, designated here as ED and AD, are nearly always observed, no matter what type of irradiation is used [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. For the rate window set at r ¼ 4 s --1 , traps ED and AD have DLTS signal peaks at about 100 and 400 K, respectively.…”

Section: Effects Of Electron Irradiationmentioning

confidence: 99%

Defect-Related Donors, Acceptors, and Traps in GaN

Look

2001

phys. stat. sol. (b)

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Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

Cited by 40 publications

References 4 publications

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

Defect-Related Donors, Acceptors, and Traps in GaN

Radiation Damage in GaN‐Based Materials and Devices

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