Room temperature photoluminescence at 4.5μm from InAsN

Abstract

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5μm is obtained.

Controlled nitrogen incorporation in GaNSb alloys

“…9 This temperature-dependent growth behaviour of dilute nitrides means that, for appreciable N incorporation, the growth temperature has to be reduced to over 100 • C lower than that associated with optimum growth of the corresponding binary alloy. In addition to Ga(In)NAs, this observation has been made for GaNSb, 10 InNAs, 11 and InNSb. 6,12,13 The N content in GaInNAs alloys grown by Kitatani et al using gas source MBE exhibited an inverse dependence upon the growth rate.…”

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

“…The temperature and power dependence of the PL emission of these samples was the subject of previous work. 12,13 Optical absorption experiments were recorded by using a BOMEM DA.8 rapid scanning FTIR interferometer. For these measurements, a globar source, a KBr beam-splitter and an MCT detector were employed.…”

“…As a consequence, the BAC parameters for InAsN are usually determined with low accuracy. Recently, Zhuang et al 12 performed PL studies on InAsN/InAs samples similar to those studied in this work, and obtained a value of C MN = 2.5 eV at 4 K and a value of C MN = 2.7 eV at 300 K. Kudrawiec et al 18 reported PR spectra of similar samples with N contents up to ϳ1% and obtained C MN = 2.7 eV at 20 K. Previous studies obtained much lower C MN values ͑Veal et al 11 found a value of C MN = 1.77 eV with PL at 80 K; Shih et al 9 and Kuroda et al 6 performed absorption measurements at 300 K and obtained C MN = 1.68 eV and 1.86 eV, respectively, after correcting for the Burstein-Moss effect͒. Vurgaftman and Meyer 31 give a recommended value of 2.0 eV.…”

“…5,9,[11][12][13]18 The results are usually analyzed in terms of the BAC model, which allows one to calculate the fundamental band gap energy of InAs 1−x N x ͑i.e., the energy of the E − subband͒ as a function of composition…”

“…More recently, the effect of the growth conditions on the incorporation of N in InAsN/InAs epilayers was investigated. 12,13 High quality samples with nitrogen compositions up to 2.5% were obtained, with intense low-temperature PL emission and relatively strong room-temperature ͑RT͒ PL emission at a wave-length of 4.5 m. Photoreflectance ͑PR͒ studies on similar epilayers allowed probing the dependence on N content of both the band gap and the spin-orbit splitting of InAsN up to a N concentration of 0.88%. 18 It was concluded that only the conduction states are affected by N, in agreement with the results obtained in the Ga͑In͒AsN alloy system and fully consistent within the framework of the band-anticrossing ͑BAC͒ model.…”