Dilute bismide and nitride alloys for mid-IR optoelectronic devices

Wang, Shumin; Kudrawiec, R.; Chi, Chaodan; Zhang, Liping; Zhang, Xiaolei; Ou, Xin

doi:10.1016/b978-0-08-102709-7.00011-5

Cited by 9 publications

(4 citation statements)

References 189 publications

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“…The geometry structures are fully relaxed in every direction. The optimized lattice parameters of all systems matching well with other works − are listed in Table . As shown in Table , as the Ga component increases, the lattice constant of Ga x In 1– x Sb decreases.…”

Section: Resultssupporting

confidence: 62%

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Zhu

Kang

et al. 2023

J. Phys. Chem. C

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Alloying is one of the most common approaches to modulate the properties of semiconductors, such as indium antimonide (InSb) with practical applications in mid-infrared optoelectronics. Thermal conductivity plays a key role in governing the operating performance of devices, and the high-efficiency regulation is of great significance to desirable applications. In this study, we studied the thermal transport properties of InSb, GaSb, and their Ga x In 1−x Sb alloys by solving the Boltzmann transport equation based on first-principles calculations. The thermal conductivity of Ga x In 1−x Sb alloys (x = 0.25, κ = 9.21 Wm −1 K −1 ; x = 0.5, κ = 11.22 Wm −1 K −1 ; and x = 0.75, κ = 15.45 Wm −1 K −1 ) is enhanced compared with that of InSb (κ = 5.15 Wm −1 K −1 ), which is unlike the conventional belief that alloying usually reduces thermal conductivity. Through fundamental analysis of phonon transport properties, the higher phonon group velocity and phonon relaxation time caused by the weak phonon anharmonicity lead to higher thermal conductivity of the Ga x In 1−x Sb alloys. The weakened polarization of Ga x In 1−x Sb alloys occurring in the alloying process generates the increased thermal conductivity, which can be figured out by analyzing the orbital-projected electronic density of states and the electron localization functions. The underlying mechanism of unconventional high thermal conductivity of the Ga x In 1−x Sb alloys in this study would provide guidance for the device applications accompanied by thermal transport.

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Section: Resultssupporting

confidence: 62%

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Zhu

Kang

et al. 2023

J. Phys. Chem. C

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“…These results confirm that the decrease in the PL emission energy of InAsN NW samples relates to an expected band gap shrinkage with an increase in nitrogen content, confirming the incorporation of N atoms into the crystalline structure of the InAsN alloy. It should be noted that the increase in the width of the PL emission band observed for InAsN NWs may be attributed to compositional inhomogeneity across the NW array or broadening of the optical transition, which is a common effect in dilute nitride III–V alloys. − …”

Section: Resultsmentioning

confidence: 99%

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Kaveev,

Fedorov,

Pavlov

et al. 2024

ACS Appl. Nano Mater.

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Epitaxial InAs-based nanowire (NW) arrays have recently gained attention as promising materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based photodetectors, we for the first time investigated dilute nitride InAsN nanowires on Si(111). The growth of InAsN nanowires with a wurtzite phase was achieved through a self-induced mechanism using plasma-assisted molecular beam epitaxy. Two growth strategies were employed to synthesize InAsN and InAs/InAsN core−shell nanowires, allowing for independent control over the morphology and optical properties. According to the photoluminescence measurement and performed ab initio calculations for the wurtzite InAsN structure, we estimate the atomic concentration of the incorporated nitrogen in the studied structure as 0.5−0.7%. Transmission electron microscopy and X-ray diffraction reveal a wurtzite crystal lattice volume shrinkage with an increase in nitrogen content. Our results demonstrate the potential of dilute nitride InAsN for strain and band gap engineering in NW photodetectors on Si.

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Section: Introductionmentioning

confidence: 99%

“…During the last couple of years, much research in the nearinfrared (NIR), mid-infrared (MIR), and far-infrared (FIR) regions of the electromagnetic spectrum has been focused on revealing the potential of novel promising semiconductor materials and semiconductor devices [1][2][3][4][5][6][7]. Undoubtedly, the emergence of the so-called highly mismatched alloys (HMAs) has accelerated the studies conducted for semiconductor-based applications in the infrared (IR) region [1]. Of the members of this class, Bismuth (Bi)-containing alloys of HMAs has become the center of interest thanks to of the bandgap without affecting electron transport-related parameters (electron effective mass, CB discontinuity, etc.)…”

Section: Introductionmentioning

confidence: 99%

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

Aydin,

Yilmaz,

Bork

et al. 2024

Appl. Phys. A

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The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with various doping densities are investigated by conducting magnetoresistance (MR) and Hall Effect (HE) measurements. The electronic band structure of the alloys and free electron distribution were calculated using Finite Element Method (FEM). Analysis of the oscillations in the transverse (Hall) resistivity shows that quasi-two-dimensional electron gas (Q-2D) in the bulk InGaAsBi epitaxial layer (three-dimensional, 3D) forms at the sample surface under magnetic field even though there is no formation of the spacial two-dimensional electron gas (2DEG) at the interface between InGaAs and InP:Fe interlayer. The formation of Q-2D in the 3D epitaxial layer was verified by temperature and magnetic field dependence of the resistivity and carrier concentration. Analysis of Shubnikov-de Haas (SdH) oscillations in longitudinal (sample) resistivity reveals that the electron effective mass in InGaAsBi alloys are not affect by Bi incorporation into host InGaAs alloys, which verifies the validity of the Valence Band Anti-Crossing (VBAC) model. The Hall mobility of the nondegenerate samples shows the conventional 3D characteristics while that of the samples is independence of temperature for degenerated samples. The scattering mechanism of the electrons at low temperature is in long-range interaction regime. In addition, the effects of electron density on the transport parameters such as the effective mass, and Fermi level are elucidated considering bandgap nonparabolicity and VBAC interaction in InGaAsBi alloys.

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Dilute bismide and nitride alloys for mid-IR optoelectronic devices

Cited by 9 publications

References 189 publications

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

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Dilute bismide and nitride alloys for mid-IR optoelectronic devices

Cited by 9 publications

References 189 publications

Unexpected Enhanced Thermal Conductivity of GaxIn1–xSb Ternary Alloys

Unexpected Enhanced Thermal Conductivity of GaxIn1–xSb Ternary Alloys

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer

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Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys

Unexpected Enhanced Thermal Conductivity of Ga_xIn_1–xSb Ternary Alloys