Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

Tahara, Takayuki; Koike, Hayato; Kameno, Makoto; Sasaki, T.; Ando, Yoshinori; Tanaka, Kanako; Miwa, Shinji; Suzuki, Y.; Shiraishi, Masashi

doi:10.7567/apex.8.113004

Cited by 68 publications

(52 citation statements)

References 15 publications

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“…In addition, choosing the spin injection direction also boosts the spin lifetime by a factor of two [18]. Recently, the first successful demonstration of a silicon SpinMOSFET at room temperature [19] was presented. A large absolute current modulation in the SpinMOSFET was achieved by altering the relative magnetization between the source and the drain from parallel to antiparallel.…”

Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

“…A large absolute current modulation in the SpinMOSFET was achieved by altering the relative magnetization between the source and the drain from parallel to antiparallel. However, the relative ratio of the on-currents, a characteristic similar to the tunnel (T) magnetoresistance (MR) ratio, is still several orders of magnitude lower [19] than the TMR in magnetic tunnel junctions. In the SpinMOSFET studied, a MR less than 1% was experimentally observed at room temperature [19].…”

Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

“…However, the relative ratio of the on-currents, a characteristic similar to the tunnel (T) magnetoresistance (MR) ratio, is still several orders of magnitude lower [19] than the TMR in magnetic tunnel junctions. In the SpinMOSFET studied, a MR less than 1% was experimentally observed at room temperature [19]. A possible option to boost the modulation is to employ an electric field at the contact interface between the ferromagnet and the two-dimensional electron gas to increase spin-to-charge conversion [20].…”

Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

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Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Sverdlov

Selberherr²

2018

FACTA U EE

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Miniaturization of semiconductor devices is the main driving force to achieve an outstanding performance of modern integrated circuits. As the industry is focusing on the development of the 3nm technology node, it is apparent that transistor scaling shows signs of saturation. At the same time, the critically high power consumption becomes incompatible with the global demands of sustaining and accelerating the vital industrial growth, prompting an introduction of new solutions for energy efficient computations. Probably the only radically new option to reduce power consumption in novel integrated circuits is to introduce nonvolatility. The data retention without power sources eliminates the leakages and refresh cycles. As the necessity to waste time on initializing the data in temporarily unused parts of the circuit is not needed, nonvolatility also supports an instanton computing paradigm. The electron spin adds additional functionality to digital switches based on field effect transistors. SpinFETs and SpinMOSFETs are promising devices, with the nonvolatility introduced through relative magnetization orientation between the ferromagnetic source and drain. A successful demonstration of such devices requires resolving several fundamental problems including spin injection from metal ferromagnets to a semiconductor, spin propagation and relaxation, as well as spin manipulation by the gate voltage. However, increasing the spin injection efficiency to boost the magnetoresistance ratio as well as an efficient spin control represent the challenges to be resolved before these devices appear on the market. Magnetic tunnel junctions with large magnetoresistance ratio are perfectly suited as key elements of nonvolatile CMOS-compatible magnetoresistive embedded memory. Purely electrically manipulated spin-transfer torque and spin-orbit torque magnetoresistive memories are superior compared to flash and will potentially compete with DRAM and SRAM. All major foundries announced a near-future production of such memories. Two-terminal magnetic tunnel junctions possess a simple structure, long retention time, high endurance, fast operation speed, and they yield a high integration density. Combining

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Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

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Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Sverdlov

Selberherr²

2018

FACTA U EE

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“…[1][2][3] Above all, a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) 4,5 , in which the source and drain electrodes are ferromagnetic materials, has attracted much attention because it is compatible with the sophisticated semiconductor technology and is expected to be used for non-volatile logic systems. 6 Although there have been some experimental demonstrations of both lateral and vertical spin MOSFETs, [7][8][9][10] there still remain problems to overcome for practical applications in the present status. In the lateral spin MOSFETs, the small magnetoresistance (MR) ratio (0.1%, 7 0.005%, 8 and 0.03% 9 ) is a crucial problem.…”

mentioning

confidence: 99%

“…6 Although there have been some experimental demonstrations of both lateral and vertical spin MOSFETs, [7][8][9][10] there still remain problems to overcome for practical applications in the present status. In the lateral spin MOSFETs, the small magnetoresistance (MR) ratio (0.1%, 7 0.005%, 8 and 0.03% 9 ) is a crucial problem. This is caused by the difficulty of the efficient spin injection from ferromagnetic metals into semiconductors and of the coherent spin transport with a long distance in semiconductor channels.…”

mentioning

confidence: 99%

Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

Kanaki

Koyama

Chiba

et al. 2016

Applied Physics Letters

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We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device. a)

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Technology Computer‐Aided Design

Selberherr

Sverdlov

2023

75th Anniversary of the Transistor

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Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

Cited by 68 publications

References 15 publications

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

Technology Computer‐Aided Design

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