Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

Kanaki, Toshiki; Koyama, Tanetoshi; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

doi:10.1063/1.4964419

Cited by 2 publications

(3 citation statements)

References 28 publications

(34 reference statements)

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“…However, the grain boundary effect of magnetic clusters becomes clear as the growth temperature increases, as shown in Figure . Therefore, the domain wall between magnetic domains can become wider to result in the formation of isolated-like magnetic domains . Accordingly, these isolated-like magnetic domains reduce the spin coupling between the magnetic domains.…”

Section: Results and Discussionmentioning

confidence: 99%

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Ferromagnetism above Room Temperature in a Ni-Doped Organic-Based Magnetic Semiconductor

Chou

Peng

Chang

et al. 2021

ACS Appl. Mater. Interfaces

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Ferromagnetic semiconductors with structural flexibility are an indispensable feature for future flexible spin-electronic applications. In this case, we introduce magnetic ingredients into an organic semiconductor, namely, pentacene, to form a ferromagnetic organic semiconductor (FOS). The first observation for ferromagnetic Ni-doped pentacene semiconductors at room temperature in the field of semiconductor spintronics is reported in this article. To date, the mechanism of FOSs with ferromagnetism is not understood yet, especially when their Curie temperature is enhanced above room temperature. Here, we demonstrate dopants of Ni atoms and the modulation of the growth temperature in the FOS films to achieve room-temperature ferromagnetic properties in a series of FOS films, one of which has a maximum coercivity of 257.6 Oe. The spin-exchange interaction between a Ni atom and a pentacene molecule is detected through the magnetic hysteresis obtained using a superconducting quantum interference device magnetometer. We verify the effectiveness of this spin coupling through magnetic force microscopy, Raman spectroscopy, scanning Kelvin probe microscopy, and theoretical simulation. A model for the indirect spin coupling between Ni atoms is proposed for the mechanism of room-temperature ferromagnetic ordering of spins due to the exchange force indirectly. We believe that the π-electrons of pentacene molecules at the triple state for this model can support the spin coupling of electrons of Ni atoms. Our findings facilitate the development of brand-new spintronic devices with structural flexibility and room-temperature ferromagnetism.

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Section: Results and Discussionmentioning

confidence: 99%

“…Therefore, the domain wall between magnetic domains can become wider to result in the formation of isolated-like magnetic domains. 37 Accordingly, these isolated-like magnetic domains reduce the spin coupling between the magnetic domains. The total magnetization of FOS was the sum of the magnetization of all magnetic domains.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Ferromagnetism above Room Temperature in a Ni-Doped Organic-Based Magnetic Semiconductor

Chou

Peng

Chang

et al. 2021

ACS Appl. Mater. Interfaces

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“…[5][6][7][8] To improve the MR ratio for practical applications, it is necessary to use ferromagnets that are compatible with semiconductors for the suppression of spin scattering at the interfaces. The ferromagnetic semiconductor GaMnAs is an ideal model material; we can obtain an atomically abrupt interface between GaMnAs and GaAs, 9) and electrical spin injection and detection were reported using GaMnAs-based lateral devices. 10,11) In fact, we recently obtained a large MR ratio of up to 60% in a GaMnAs-based vertical spin MOSFET; 12) however, the small gate modulation ratio of 0.5-20% of the drain current I D is a major problem to be solved.…”

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confidence: 99%

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Asahara

Kanaki

Ohya

et al. 2018

Appl. Phys. Express

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We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current–voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ∼10% are obtained. These values are much larger than those (∼0.1%) reported for lateral-type spin metal–oxide–semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

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Spin-dependent transport and current modulation in a current-in-plane spin-valve field-effect transistor

Cited by 2 publications

References 28 publications

Ferromagnetism above Room Temperature in a Ni-Doped Organic-Based Magnetic Semiconductor

Ferromagnetism above Room Temperature in a Ni-Doped Organic-Based Magnetic Semiconductor

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

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