Here we report the synthesis of conducting indium tin oxide (ITO) nanoparticles (NPs) and their surface plasmon resonance (SPR) properties. The SPR peaks of the ITO NPs can be easily tuned by changing the concentration of Sn doping from 3 to 30 mol %. The shortest SPR wavelength of 1618 nm in 10% Sn-doped ITO NPs may reflect the highest electron carrier density in the ITO NPs. The controllable SPR frequencies of metal oxides may offer a novel approach for noble-metal-free SPR applications. Unlike noble-metal nanostructures, ITO has no inter- and intraband transitions in the vis-near-IR region and represents a free-electron conduction, allowing us to systematically study the origin of optical effects arising from the SPRs of conduction electrons.

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in non-degenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observed the modulation of the Hanle-type spin precession signals, which is a characteristic spin dynamics in non-degenerate semiconductor. We obtained long spin transport of more than 20 µm and spin rotation, greater than 4π at RT. We also observed gate-induced modulation of spin transport signals at RT. The modulation of spin diffusion length as a function of a gate voltage was successfully observed, which we attributed to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to make avenues to create of practical Si-based spin MOSFETs.

Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 ohm at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.

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The authors identified an insufficient description in the caption of Fig. 3(a) of the main text about subtracting a background signal to obtain the Hanle spin signals [ Fig. 3(a)]. The detailed procedure is as follows: The background signal was defined as a signal that was independent of magnetization alignments, i.e., parallel and antiparallel. The background signal V BG ðBÞ was calculated to be ½V P ðBÞ þ V AP ðBÞ=2, where V P ðBÞ and V AP ðBÞ are Hanle spin signals under parallel and antiparallel magnetization configurations, under the assumption that the background signal is unchanged. The authors P Ω AP 300 K